Recent advances in flexible inorganic light emitting diodes: From materials design to integrated optoelectronic platforms
The emergence of high‐performance materials for flexible inorganic light emitting diodes
(ILEDs) provides the foundations for a broad range of compelling, unconventional systems …
(ILEDs) provides the foundations for a broad range of compelling, unconventional systems …
Recent Advances in Mechanically Transferable III‐Nitride Based on 2D Buffer Strategy
W Song, Q Chen, K Yang, M Liang, X Yi… - Advanced Functional …, 2023 - Wiley Online Library
Group III‐nitrides have attracted significant attention in recent years for their wide tunable
band‐gaps and excellent optoelectronic capabilities, which are advantageous for several …
band‐gaps and excellent optoelectronic capabilities, which are advantageous for several …
Van der Waals heteroepitaxial AZO/NiO/AZO/muscovite (ANA/muscovite) transparent flexible memristor
Multifunctional electronics featuring optical transparency, portability, mechanical flexibility,
light-weight and environment-friendly are of great demands for next-generation smart …
light-weight and environment-friendly are of great demands for next-generation smart …
Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle
There have been rapidly increasing demands for flexible lighting apparatus, and micrometer-
scale light-emitting diodes (LEDs) are regarded as one of the promising lighting sources for …
scale light-emitting diodes (LEDs) are regarded as one of the promising lighting sources for …
[HTML][HTML] Graphitic C3N4 quantum dots for next-generation QLED displays
L He, M Fei, J Chen, Y Tian, Y Jiang, Y Huang, K Xu… - Materials Today, 2019 - Elsevier
Quantum dot light-emitting diode (QLED) displays are considered a next-generation
technology, but previously reported quantum dots (QDs) consisting of heavy metals are toxic …
technology, but previously reported quantum dots (QDs) consisting of heavy metals are toxic …
Ultrashort pulse laser lift-off processing of InGaN/GaN light-emitting diode chips
Gallium nitride (GaN) film delamination is an important process during the fabrication of GaN
light-emitting diodes (LEDs) and laser diodes. Here, we utilize 520 nm femtosecond laser …
light-emitting diodes (LEDs) and laser diodes. Here, we utilize 520 nm femtosecond laser …
Do** challenges and pathways to industrial scalability of III–V nanowire arrays
Semiconductor nanowires (NWs) have been investigated for decades, but their application
into commercial products is still difficult to achieve, with triggering causes related to the …
into commercial products is still difficult to achieve, with triggering causes related to the …
Wafer-scale transfer route for top–down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique
The integration of gallium nitride (GaN) nanowire light-emitting diodes (nanoLEDs) on
flexible substrates offers opportunities for applications beyond rigid solid-state lighting (eg …
flexible substrates offers opportunities for applications beyond rigid solid-state lighting (eg …
Transferable, flexible white light-emitting diodes of GaN p–n junction microcrystals fabricated by remote epitaxy
The remote epitaxy of GaN p–n homojunction microcrystals (μCs) is demonstrated for
fabricating transferable, flexible white light-emitting diodes (WLEDs). The GaN p–n junction …
fabricating transferable, flexible white light-emitting diodes (WLEDs). The GaN p–n junction …
Chip-scale GaN integration
Abstract Blue LEDs and HEMTs based on III-Nitride have been flourishing commercially
across the globe, thanks largely to breakthroughs in the material quality of the wide …
across the globe, thanks largely to breakthroughs in the material quality of the wide …