In this letter, gate leakage mechanisms in different gate contact normally off p-
GaN/AlGaN/GaN high electron mobility transistors (HEMTs) have been studied by the …

In this work, we propose a novel enhancement-mode GaN metal-oxide-semiconductor high
electron mobility transistor (MOS-HEMT) with a 10 nm T-gate length and a high-k TiO 2 gate …

In this work, low voltage RF power capability on AlGaN/GaN and InAlN/GaN HEMTs is
analyzed from the perspective of DC and pulse characteristics, for terminal applications …

In this letter, we have reported a novel metal scheme Ti/Au/Al/Ni/Au for ohmic contact on
AlGaN/GaN high-electron-mobility transistors. The reported metal scheme is observed to …

In this article, single-layer intrinsic and fluorinated graphene were investigated as gate
insertion layers in normally-OFF p-gallium nitride (GaN) gate high electron mobility …

In this work, high-efficiency InAlN/GaN high electron mobility transistor (HEMT) is fabricated
by recess and oxidation process under the gate (RAO) for low-voltage RF applications …

The submicrometer gate HEMT is fabricated with an ultrathin-barrier (UTB) AlGaN/gallium
nitride (GaN) combined with in situ SiN passivation. The sheet resistance of the UTB Al 0.2 …

In this work, high-efficiency millimeter-wave enhancement-mode (E-mode) Fin-high electron
mobility transistor (HEMT) is fabricated to satisfy low-voltage terminal applications, whose …

In this study, a novel AlGaN/GaN heterostructure field-effect transistor based on open-gate
technology was fabricated. Sample transistors of different structures and sizes were …

Reduction of the reverse leakage current is critical to AlGaN/GaN heterostructures in high
power and high frequency applications. Taking AlGaN/GaN Schottky barrier diodes (SBDs) …