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Effects of al precursors on the characteristics of indium–aluminum oxide semiconductor grown by plasma-enhanced atomic layer deposition
S Lee, M Kim, G Mun, J Ko, HI Yeom… - … Applied Materials & …, 2021 - ACS Publications
Atomic layer deposition (ALD) has attracted much attention, particularly for applications in
nanoelectronics because of its atomic-level controllability and high-quality products. In this …
nanoelectronics because of its atomic-level controllability and high-quality products. In this …
Direct Analysis of Stacked Au/Ti/In2O3/Al2O3/p+-Si Transport Mechanisms Using Operando Hard X-ray Photoelectron Spectroscopy
Oxygen transport mechanisms for two different Au/Ti/In2O3/Al2O3/p+-Si samples were
experimentally evaluated by hard X-ray photoelectron spectroscopy (HAXPES). The …
experimentally evaluated by hard X-ray photoelectron spectroscopy (HAXPES). The …
High mobility silicon indium oxide thin-film transistor fabrication by sputtering process
Amorphous silicon indium oxide (a-ISO) thin-films were deposited by sputtering process at
room temperature for thin-film transistor (TFT) active channel applications. The amorphous …
room temperature for thin-film transistor (TFT) active channel applications. The amorphous …
Sn-doped n-type amorphous gallium oxide semiconductor with energy bandgap of 4.9 eV
An n-type amorphous Ga 2 O 3 thin film with a bandgap of 4.9 eV is formed using the Sn-
dopant spin-on-glass (SOG) method followed by a drive-in process at 400° C for 1 h in an Ar …
dopant spin-on-glass (SOG) method followed by a drive-in process at 400° C for 1 h in an Ar …
Low voltage thin film transistors based on solution-processed In2O3: W. A remarkably stable semiconductor under negative and positive bias stress
K Paxinos, G Antoniou, D Afouxenidis… - Applied Physics …, 2020 - pubs.aip.org
Thin film transistors (TFTs) based on metal oxide semiconductors have been attracting
considerable attention over the last two decades as alternatives to a-Si due to their superior …
considerable attention over the last two decades as alternatives to a-Si due to their superior …
Comparison of characteristics of thin-film transistor with In2O3 and carbon-doped In2O3 channels by atomic layer deposition and post-metallization annealing in O3
Characteristics of thin-film transistors (TFTs) with amorphous In 2 O 3 (InO 1.2) and carbon-
doped In 2 O 3 (InO 1.16 C 0.04) channels by post-metallization annealing (PMA) process …
doped In 2 O 3 (InO 1.16 C 0.04) channels by post-metallization annealing (PMA) process …
Viable Approach of Tuning Oxide Semiconductor Thin Films in Solution‐Processed Heterojunction Thin Films Transistors for Both Higher Performances and Stability
JS Eun, J Lee, JH Na, JH Park, W Park… - Advanced Electronic …, 2024 - Wiley Online Library
Metal‐oxide thin‐film transistors (TFTs) have garnered much attention because of their
advantages such as high transparency, low leakage current, and low processing …
advantages such as high transparency, low leakage current, and low processing …
The influence of post-annealing temperature on indium-silicon oxide thin film transistors
The room temperature sputtered Indium silicon oxide (ISO) thin-films were post annealed at
various temperatures and studied for thin-film transistor (TFT) active channel layer …
various temperatures and studied for thin-film transistor (TFT) active channel layer …
Enhanced electrical performance and reliability of Ti-IGZO thin-film transistors with Hf1-xAlxO gate dielectrics
BC You, SJ Wang, RM Ko, JH Wu… - Japanese Journal of …, 2020 - iopscience.iop.org
A thin-film transistor (TFT) with a Ti-IGZO channel layer and Hf 1-x Al x O gate dielectric is
proposed to improve the performance and reliability of the device. The experimental results …
proposed to improve the performance and reliability of the device. The experimental results …
[HTML][HTML] Compositional changes between metastable SnO and stable SnO2 in a sputtered film for p-type thin-film transistors
Abstract p-Type tin (II) oxide (SnO (Sn 2+)) formation using radiofrequency (RF) reactive
magnetron sputtering and post-deposition annealing (PDA) processes was investigated …
magnetron sputtering and post-deposition annealing (PDA) processes was investigated …