[HTML][HTML] Spectroscopic Ellipsometry and Correlated Studies of AlGaN-GaN HEMTs Prepared by MOCVD
A series of AlGaN/GaN high-electron-mobility transistor (HEMT) structures, with an AlN thin
buffer, GaN thick layer and Al0. 25Ga0. 75N layer (13–104 nm thick), is prepared by metal …
buffer, GaN thick layer and Al0. 25Ga0. 75N layer (13–104 nm thick), is prepared by metal …
[HTML][HTML] Theoretical and Experimental Research on the Short-Range Structure in Gallium Melts Based on the Wulff Cluster Model
C Wang, M Hua, L Wang, S Wang, J Liu, R Liu, X Tian… - Materials, 2024 - mdpi.com
In this paper, the short-range ordering structures of Ga melts has been investigated using
the Wulff cluster model (WCM). The structures with a Wulff shape outside and crystal …
the Wulff cluster model (WCM). The structures with a Wulff shape outside and crystal …