Ferroelectric and two-dimensional (2D) materials are both heavily investigated classes of
electronic materials. This is unsurprising since they both have superlative fundamental …

2D semiconductors have interesting physical and chemical attributes that have led them to
become one of the most intensely investigated semiconductor families in recent history …

Abstract Aluminum Scandium Nitride (Al1− xScxN) has received attention for its exceptional
ferroelectric properties, whereas the fundamental mechanism determining its dynamic …

Piezoelectric and ferroelectric wurtzite are promising to reshape modern microelectronics
because they can be easily integrated with mainstream semiconductor technology. Sc …

The growth in data generation necessitates efficient data processing technologies to
address the von Neumann bottleneck in conventional computer architecture. Memory-driven …

Al1− xScxN emerges as a revolutionary ferroelectric material within the III‐N family. It
combines exceptional switchable polarization (80–165 µC cm− 2), highly tunable coercive …

A nanoscale ferroelectric film with a periodic 4×[HfO2 (10 Å)-ZrO2 (5 Å)] superlattice (HZSL)
structure was prepared with an optimal annealing temperature identified as 500° C to …

The recent demonstration of ferroelectricity in nitride materials has enabled a broad
spectrum of applications across electronics, optoelectronics, photovoltaics, photonics …

With field effect transistor (FET) sustained to downscale to sub‐10 nm nodes, performance
degradation originates from short channel effects (SCEs) degradation and power …