Mid‐wavelength infrared (MWIR) photodetectors (PDs) are highly essential for
environmental sensing of hazardous gases, security, defense, and medical applications …

In 1989, one author of this paper (AR) published the very first review paper on InAsSb
infrared detectors. During the last thirty years, many scientific breakthroughs and …

Advances in bulk III-V semiconductor material such as InGaAsSb and metamorphic InAsSb,
as well as in a variety of type-II superlattices such as InGaAs/GaAsSb, InAs/GaSb, and …

There was a significant improvement in the performance of infrared nBn detectors utilizing
InAs/InAsSb absorbers culminating in the development of infrared focal plane arrays (FPAs) …

We demonstrate all-epitaxial guided-mode resonance mid-wave infrared (MWIR) type-II
superlattice nBn photodetectors. Our detectors consist of a high-index absorber/waveguide …

Mid-infrared (MIR) silicon photonics holds the potential for realizing next generation
ultracompact spectroscopic systems for applications in gas sensing, defense, and medical …

A high operating temperature mid-wavelength infrared pBn photodetector based on the type-
II InAs/InAsSb superlattice on a GaSb substrate has been demonstrated. At 150 K, the …

One of the critical limitations of photonic infrared (IR) photodetectors is the cooling
requirement that is placed on it. Uncooled detectors are usually based on thermal detectors …

The effect of majority carrier concentration and minority carrier lifetime on the performance of
mid-wave infrared (λ cutoff= 5.5 μ m) nBn detectors with variably doped InGaAs/InAsSb type …

We studied long and very long wavelength InAs/InAsSb superlattice barrier infrared
detectors that contain p-type absorber layers in order to take advantage of the longer …