Linear and nonlinear optical properties in a semiconductor quantum well under intense laser radiation: effects of applied electromagnetic fields
In this work we are studying the intense laser effects on the electron-related linear and
nonlinear optical properties in GaAs–Ga1− xAlxAs quantum wells under applied electric and …
nonlinear optical properties in GaAs–Ga1− xAlxAs quantum wells under applied electric and …
Intense laser effects on nonlinear optical absorption and optical rectification in single quantum wells under applied electric and magnetic field
In this work the effects of intense laser on the electron-related nonlinear optical absorption
and nonlinear optical rectification in GaAs–Ga1− xAlxAs quantum wells are studied under …
and nonlinear optical rectification in GaAs–Ga1− xAlxAs quantum wells are studied under …
The simultaneous effects of the wetting layer, intense laser and the conduction band non-parabolicity on the donor binding energy in a InAs/GaAs conical quantum dot …
Using the finite element method, we have performed a systematic study on the ground-state
binding energy (of a donor impurity confined in a conical quantum dot (CQD) with wetting …
binding energy (of a donor impurity confined in a conical quantum dot (CQD) with wetting …
Intense laser effects on donor impurity in a cylindrical single and vertically coupled quantum dots under combined effects of hydrostatic pressure and applied electric …
Using the effective mass and parabolic band approximations and a variational procedure we
have calculated the combined effects of intense laser radiation, hydrostatic pressure, and …
have calculated the combined effects of intense laser radiation, hydrostatic pressure, and …
Intense laser field effects on the linear and nonlinear intersubband optical properties in a strained InGaN/GaN quantum well
MJ Karimi, H Vafaei - Physica B: Condensed Matter, 2014 - Elsevier
In this work, the linear, the third-order nonlinear and the total optical absorption coefficients
and refractive index changes of a strained InGaN/GaN quantum well are investigated …
and refractive index changes of a strained InGaN/GaN quantum well are investigated …
Combined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells: Transition from the single to double quantum well
The effects of intense laser radiation on the exciton states in GaAs‐Ga1–xAlxAs quantum
wells are studied with the inclusion of applied dc electric fields oriented along the growth …
wells are studied with the inclusion of applied dc electric fields oriented along the growth …
Energy dispersion and electron g-factor of quantum wire in external electric and magnetic fields with Rashba spin orbit interaction
We study the energy dispersion relations of the spin split subbands in a quantum wire
subjected to external transverse electric and magnetic fields in the presence of Rashba spin …
subjected to external transverse electric and magnetic fields in the presence of Rashba spin …
Intense laser field effect on impurity states in a semiconductor quantum well: transition from the single to double quantum well potential
In this work are studied the intense laser effects on the impurity states in GaAs-Ga 1− x Al x
As quantum wells under applied electric and magnetic fields. The electric field is taken …
As quantum wells under applied electric and magnetic fields. The electric field is taken …
Combined effect of rashba spin-orbit interaction, hydrostatic pressure and temperature on energy dispersion based ballistic conductance of InAs tunnel-coupled …
S Kumar, M Kumar, A Kumar - Physica B: Condensed Matter, 2024 - Elsevier
In this work the change in energy dispersion curve and ballistic conductance for InAs tunnel-
coupled double quantum wire (DQWR) under the influence of the external magnetic field …
coupled double quantum wire (DQWR) under the influence of the external magnetic field …
Magnetopolaron effect on shallow-impurity states in the presence of magnetic and intense terahertz laser fields in the Faraday configuration
The magnetopolaron effect on shallow-impurity states in semiconductors is investigated
when subjected simultaneously to a magnetic field and an intense terahertz laser field within …
when subjected simultaneously to a magnetic field and an intense terahertz laser field within …