β-Ga2O3-Based Power Devices: A Concise Review
Ga2O3 has gained intensive attention for the continuing myth of the electronics as a new-
generation wide bandgap semiconductor, owing to its natural physical and chemical …
generation wide bandgap semiconductor, owing to its natural physical and chemical …
A strategic review on gallium oxide based power electronics: Recent progress and future prospects
Silicon based power devices have limited capabilities in terms of voltage handling and
switching speeds, leading to rampant research in the field of next generation wide bandgap …
switching speeds, leading to rampant research in the field of next generation wide bandgap …
A state-of-art review on gallium oxide field-effect transistors
As a promising ultra-wide bandgap (UWBG) semiconductor, gallium oxide (Ga 2 O 3) has
recently aroused increasing attention in the area for high-power electronics, power switch for …
recently aroused increasing attention in the area for high-power electronics, power switch for …
Extremely Low Thermal Resistance of β-Ga2O3 MOSFETs by Co-integrated Design of Substrate Engineering and Device Packaging
Z Qu, Y ** of two-dimensional WSe 2
The device applications of β-Ga2O3 semiconductors are limited by the absence of effective
acceptors to form β-Ga2O3 p–n homojunctions. Herein, a WSe2/β-Ga2O3 p–n …
acceptors to form β-Ga2O3 p–n homojunctions. Herein, a WSe2/β-Ga2O3 p–n …
Performance Enhancement of MOCVD Grown β-Ga2O3 MOSFETs on Silicon Substrates via AlN Buffer Layer
AK Singh, S Huang, JH Shen, TH Wu… - ACS Applied …, 2025 - ACS Publications
β-Ga2O3-based MOSFETs hold significant promise for high-power device applications due
to their wide band gap and high breakdown voltage. However, the direct integration of β …
to their wide band gap and high breakdown voltage. However, the direct integration of β …