Transition‐metal dichalcogenides (TMDCs) are an important class of two‐dimensional (2D)
layered materials for electronic and optoelectronic applications, due to their ultimate body …

The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …

The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage …

The scaling of complementary metal oxide semiconductor transistors has led to the silicon
dioxide layer, used as a gate dielectric, being so thin (1.4 nm) that its leakage current is too …

The discovery of ferroelectricity in polycrystalline thin films of doped HfO2 has reignited the
expectations of develo** competitive ferroelectric non-volatile memory devices. To date, it …

The experimental and modeling study of bias-stress-induced threshold voltage instabilities
in amorphous indium-gallium-zinc oxide thin film transistors is reported. Positive stress …

The past 20 years has witnessed a rapid expansion of applications using metal oxide
semiconductor devices that ranges from displays technology, to clothing and packaging …

This letter presents calculations of the energy levels of the oxygen vacancy and oxygen
interstitial defects in HfO 2 using density functional methods that do not need an empirical …

Oxide-based resistive switching devices are promising candidates for new memory and
computing technologies. Poor understanding of the defect-based mechanisms that give rise …

Thin-film transistors (TFTs) fabricated using amorphous oxide semiconductors (AOS) exhibit
good electron mobility (5 to>; 50 cm 2/V· s), they are transparent, and they can be processed …