A central goal in quantum optics and quantum information science is the development of
quantum networks to generate entanglement between distributed quantum memories …

Silicon carbide has recently surged as an alternative material for scalable and integrated
quantum photonics, as it is a host for naturally occurring color centers within its bandgap …

In the last two decades, bulk, homoepitaxial, and heteroepitaxial growth of silicon carbide
(SiC) has witnessed many advances, giving rise to electronic devices widely used in high …

Photonic integrated circuits (PICs) based on lithographically patterned waveguides provide
a scalable approach for manipulating photonic bits, enabling seminal demonstrations of a …

This paper summarizes key findings in single-photon generation from deep level defects in
silicon carbide (SiC) and highlights the significance of these individually addressable …

Constructing quantum devices comprises various challenging tasks, especially when
concerning their nanoscale geometry. For quantum color centers, the traditional approach is …

The search for an ideal single-photon source (SPS) with superior emission properties is still
at the core of many research efforts in optical quantum technologies and the criteria …

Significant progress has been achieved with silicon carbide (SiC) high power electronics
and quantum technologies, both drawing upon the unique properties of this material. In this …

High-yield engineering and characterization of cavity–emitter coupling is an outstanding
challenge in develo** scalable quantum network nodes. Ex situ defect formation systems …

We report on the generation and annihilation of color centers in 4H silicon carbide (SiC) by
proton irradiation and subsequent annealing. Using low-temperature photoluminescence …