Interface Properties of Group-III-Element Deposited-Layers Integrated in High-Sensitivity Si Photodiodes
L Qi - 2016 - research.tudelft.nl
In this thesis, the research on silicon-based CMOS-compatible PureB technology was
continued with the goal of enabling a PureB process module that could be added as a back …
continued with the goal of enabling a PureB process module that could be added as a back …
Diode design for studying material defect distributions with avalanche–mode light emission
Avalanche-mode visual light emission in Si diodes is shown to be useful for rapid
assessment of the origin of non-ideal currents. In the test structure design, it was important to …
assessment of the origin of non-ideal currents. In the test structure design, it was important to …