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Band parameters for nitrogen-containing semiconductors
We present a comprehensive and up-to-date compilation of band parameters for all of the
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …
nitrogen-containing III–V semiconductors that have been investigated to date. The two main …
Nonpolar and semipolar III-nitride light-emitting diodes: Achievements and challenges
It has been several years since InGaN/GaN light-emitting diodes (LEDs) on nonpolar and
semipolar orientations were first demonstrated. Prominent performance and inherent …
semipolar orientations were first demonstrated. Prominent performance and inherent …
X-ray diffraction of III-nitrides
The III-nitrides include the semiconductors AlN, GaN and InN, which have band gaps
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …
[کتاب][B] Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth
H Morkoį - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
High-brightness polarized light-emitting diodes
Light-emitting diodes are becoming the alternative for future general lighting applications,
with huge energy savings compared to conventional light sources owing to their high …
with huge energy savings compared to conventional light sources owing to their high …
Local versus nonlocal information in quantum-information theory: formalism and phenomena
In spite of many results in quantum information theory, the complex nature of compound
systems is far from clear. In general the information is a mixture of local and nonlocal …
systems is far from clear. In general the information is a mixture of local and nonlocal …
Properties of strained wurtzite GaN and AlN: Ab initio studies
The structural, dielectric, lattice-dynamical, and electronic properties of biaxially and
uniaxially strained group-III nitrides are studied ab initio using a pseudopotential-plane …
uniaxially strained group-III nitrides are studied ab initio using a pseudopotential-plane …
Distinguishability and indistinguishability by local operations and classical communication
It is well known that orthogonal quantum states can be distinguished perfectly. However, if
we assume that these orthogonal quantum states are shared by spatially separated parties …
we assume that these orthogonal quantum states are shared by spatially separated parties …
Effects of strain on the band structure of group-III nitrides
We present a systematic study of strain effects on the electronic band structure of the group-
III-nitrides (AlN, GaN and InN) in the wurtzite phase. The calculations are based on density …
III-nitrides (AlN, GaN and InN) in the wurtzite phase. The calculations are based on density …
Local indistinguishability: More nonlocality with less entanglement
We provide a first operational method for checking local indistinguishability of orthogonal
states. It originates from that in Ghosh et al.[Phys. Rev. Lett. 87, 5807 (2001)], though we …
states. It originates from that in Ghosh et al.[Phys. Rev. Lett. 87, 5807 (2001)], though we …