Control of size and distribution of silicon quantum dots in silicon dielectrics for solar cell application: A review

S Dutta, S Chatterjee, K Mallem, YH Cho, J Yi - Renewable Energy, 2019 - Elsevier
Nano-scale engineering for optoelectronic properties of silicon has shown its suitability in
the modern era of Photovoltaic. The major focus is on Silicon quantum dots (Si QDs) which …

High-performance flexible resistive random-access memory based on SnS 2 quantum dots with a charge trap**/de-trap** effect

H An, Y Li, Y Ren, Y Wan, W Wang, Z Sun, J Zhong… - Nanoscale, 2024 - pubs.rsc.org
The application of resistive random-access memory (RRAM) in storage and neuromorphic
computing has attracted widespread attention. Benefitting from the quantum effect, transition …

Controlling the c-Si/a-Si: H interface in silicon heterojunction solar cells fabricated by HWCVD

M Agarwal, A Pawar, N Wadibhasme, R Dusane - Solar Energy, 2017 - Elsevier
This paper deals with the engineering of the hetero-interface between intrinsic amorphous
silicon (ia-Si: H) layer and the n-type crystalline silicon (c-Si) wafer during the fabrication of …

Properties of silicon nanocrystals with boron and phosphorus do** fabricated via silicon rich oxide and silicon dioxide bilayers

TCJ Yang, K Nomoto, B Puthen-Veettil… - Materials Research …, 2017 - iopscience.iop.org
Abstract Effects of boron and phosphorus do** on the structural, electrical, and optical
properties of silicon nanocrystals in superlattice thin films were investigated. Silicon …

Silicon quantum dot solar cell using top-down approach

PG Kale, CS Solanki - International Nano Letters, 2015 - Springer
The current trend of research in the area of third-generation photovoltaics is to increase the
efficiency of solar cell device adopting alternate and novel ways such as use of quantum …

Design criteria for silicon nanostructures in silicon based triple junction solar cell

H Heidarzadeh, A Rostami, M Dolatyari… - Optical and Quantum …, 2016 - Springer
Abstracts This study aims to design a novel triple-junction solar cell consisting a
monolithically interconnected silicon (Si) bottom cell, quantum dots (QDs) based middle cell …

Improved electrical properties of silicon quantum dot layers for photovoltaic applications

S Hong, IB Baek, GY Kwak, SH Lee, JS Jang… - Solar Energy Materials …, 2016 - Elsevier
The low density of silicon quantum dots (Si QDs) in a dielectric matrix is one of the plausible
reasons for the low power conversion efficiency (PCE) of Si QD solar cells due to large …

Energetics and carrier transport in doped Si/SiO 2 quantum dots

N Garcia-Castello, S Illera, JD Prades, S Ossicini… - Nanoscale, 2015 - pubs.rsc.org
In the present theoretical work we have considered impurities, either boron or phosphorous,
located at different substitutional sites in silicon quantum dots (Si-QDs) with diameters …

Preparation and photovoltaic properties of silicon quantum dots embedded in a dielectric matrix: a review

X Chen, P Yang - Journal of Materials Science: Materials in Electronics, 2015 - Springer
Over the last few years silicon quantum dots (Si QDs) have come under intensive research
because of their interesting physical properties and their potential use in future electronic …

Strong absorption enhancement in Si nanorods

I Sychugov, F Sangghaleh, B Bruhn, F Pevere… - Nano Letters, 2016 - ACS Publications
We report two orders of magnitude stronger absorption in silicon nanorods relative to bulk in
a wide energy range. The local field enhancement and dipole matrix element contributions …