Gate Dielectrics and MOS ULSIs provides necessary and sufficient information for those who
wish to know well and go beyond the conventional SiO2 gate dielectric. The topics …

We have studied the growth kinetics of the N2O furnace oxynitridation process
demonstrating the importance of input flow rate, and therefore gas residence time, in …

We have used chemical depth profiling, with a depth resolution of 10 A, in conjunction with x-
ray photoelectron spectroscopy to study the composition and chemical bonding in thin …

Atomic oxygen, which can be liberated as an intermediate product in the decomposition of
N2, is shown to be effective in removing N previously incorporated in SiO2 layers grown in …

A method is proposed that allows the growth of gate oxides of different thicknesses on a
single wafer. The method does not require masking the gate oxide during oxidation with its …

[57] ABSTRACT A semiconductor manufacturing process for producing MOS integrated
circuits having tWo gate oxide thickness is pro vided. A? rst gate dielectric is formed on an …

The electrochemical deposition of polypyrrole (PPy) on p-Si (100) electrodes was
investigated. The electrodeposition was performed in aqueous electrolyte solutions utilising …

57 ABSTRACT A Semiconductor proceSS for producing two gate oxide thicknesses within
an integrated circuit in which a Semicon ductor Substrate having a first region and a Second …

The chemical structure and composition of ultrathin N2O oxides have been investigated
using angle resolved x‐ray photoelectron spectroscopy and compared to those of reoxidized …

A thin oxide film on base metals provides the protective layer required to make metals
useful. Without such a layer, they would adhere to and react with each other as well as with …