High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect

G Chen, Y Yu, Y Shi, N Li, W Luo, L Cao… - Laser & Photonics …, 2022 - Wiley Online Library
A photodetector (PD) converts optical signals into electrical ones and is widely used in
optical interconnect. High‐speed PDs are in high demand as they are necessary to meet …

Breakthrough in silicon photonics technology in telecommunications, biosensing, and gas sensing

M Shahbaz, MA Butt, R Piramidowicz - Micromachines, 2023 - mdpi.com
Silicon photonics has been an area of active research and development. Researchers have
been working on enhancing the integration density and intricacy of silicon photonic circuits …

High-speed carbon nanotube photodetectors for 2 μm communications

W Wu, H Ma, X Cai, B Han, Y Li, K Xu, H Lin, F Zhang… - ACS …, 2023 - ACS Publications
In the era of big data, the growing demand for data transmission capacity requires the
communication band to expand from the traditional optical communication windows (∼ 1.3 …

Thin film ferroelectric photonic-electronic memory

G Zhang, Y Chen, Z Zheng, R Shao, J Zhou… - Light: Science & …, 2024 - nature.com
To reduce system complexity and bridge the interface between electronic and photonic
circuits, there is a high demand for a non-volatile memory that can be accessed both …

Recent advances in Si-compatible nanostructured photodetectors

R Douhan, K Lozovoy, A Kokhanenko, H Deeb, V Dirko… - Technologies, 2023 - mdpi.com
In this review the latest advances in the field of nanostructured photodetectors are
considered, stating the types and materials, and highlighting the features of operation …

[HTML][HTML] Recent Progress in Photodetectors: From Materials to Structures and Applications

T Ma, N Xue, A Muhammad, G Fang, J Yan, R Chen… - Micromachines, 2024 - mdpi.com
Photodetectors are critical components in a wide range of applications, from imaging and
sensing to communications and environmental monitoring. Recent advancements in …

GeSn Waveguide Photodetectors with Vertical p–i–n Heterostructure for Integrated Photonics in the 2 μm Wavelength Band

CH Liu, R Bansal, CW Wu, YT Jheng… - Advanced Photonics …, 2022 - Wiley Online Library
The 2 μm wavelength band (1800–2100 nm) emerges as a promising candidate for next‐
generation optical communication. As a result, silicon photonic platforms acquire great …

Design and optimization of GeSn waveguide photodetectors for 2-µm band silicon photonics

S Ghosh, R Bansal, G Sun, RA Soref, HH Cheng… - Sensors, 2022 - mdpi.com
Silicon photonics is emerging as a competitive platform for electronic–photonic integrated
circuits (EPICs) in the 2 µm wavelength band where GeSn photodetectors (PDs) have …

Dark current in monolithic extended-SWIR GeSn PIN photodetectors

MRM Atalla, S Assali, S Koelling, A Attiaoui… - Applied Physics …, 2023 - pubs.aip.org
Monolithic integration of extended short-wave infrared photodetectors (PDs) on silicon is
highly sought-after to implement manufacturable, cost-effective sensing and imaging …

GeSn-based multiple-quantum-well photodetectors for mid-infrared sensing applications

H Kumar, AK Pandey - IEEE Transactions on NanoBioscience, 2021 - ieeexplore.ieee.org
Silicon (Si)-based mid-infrared (MIR) photonics has promising potential for realizing next-
generation ultra-compact spectroscopic systems for various applications such as label-free …