High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect
A photodetector (PD) converts optical signals into electrical ones and is widely used in
optical interconnect. High‐speed PDs are in high demand as they are necessary to meet …
optical interconnect. High‐speed PDs are in high demand as they are necessary to meet …
Breakthrough in silicon photonics technology in telecommunications, biosensing, and gas sensing
Silicon photonics has been an area of active research and development. Researchers have
been working on enhancing the integration density and intricacy of silicon photonic circuits …
been working on enhancing the integration density and intricacy of silicon photonic circuits …
High-speed carbon nanotube photodetectors for 2 μm communications
In the era of big data, the growing demand for data transmission capacity requires the
communication band to expand from the traditional optical communication windows (∼ 1.3 …
communication band to expand from the traditional optical communication windows (∼ 1.3 …
Thin film ferroelectric photonic-electronic memory
To reduce system complexity and bridge the interface between electronic and photonic
circuits, there is a high demand for a non-volatile memory that can be accessed both …
circuits, there is a high demand for a non-volatile memory that can be accessed both …
Recent advances in Si-compatible nanostructured photodetectors
R Douhan, K Lozovoy, A Kokhanenko, H Deeb, V Dirko… - Technologies, 2023 - mdpi.com
In this review the latest advances in the field of nanostructured photodetectors are
considered, stating the types and materials, and highlighting the features of operation …
considered, stating the types and materials, and highlighting the features of operation …
[HTML][HTML] Recent Progress in Photodetectors: From Materials to Structures and Applications
T Ma, N Xue, A Muhammad, G Fang, J Yan, R Chen… - Micromachines, 2024 - mdpi.com
Photodetectors are critical components in a wide range of applications, from imaging and
sensing to communications and environmental monitoring. Recent advancements in …
sensing to communications and environmental monitoring. Recent advancements in …
GeSn Waveguide Photodetectors with Vertical p–i–n Heterostructure for Integrated Photonics in the 2 μm Wavelength Band
The 2 μm wavelength band (1800–2100 nm) emerges as a promising candidate for next‐
generation optical communication. As a result, silicon photonic platforms acquire great …
generation optical communication. As a result, silicon photonic platforms acquire great …
Design and optimization of GeSn waveguide photodetectors for 2-µm band silicon photonics
Silicon photonics is emerging as a competitive platform for electronic–photonic integrated
circuits (EPICs) in the 2 µm wavelength band where GeSn photodetectors (PDs) have …
circuits (EPICs) in the 2 µm wavelength band where GeSn photodetectors (PDs) have …
Dark current in monolithic extended-SWIR GeSn PIN photodetectors
Monolithic integration of extended short-wave infrared photodetectors (PDs) on silicon is
highly sought-after to implement manufacturable, cost-effective sensing and imaging …
highly sought-after to implement manufacturable, cost-effective sensing and imaging …
GeSn-based multiple-quantum-well photodetectors for mid-infrared sensing applications
Silicon (Si)-based mid-infrared (MIR) photonics has promising potential for realizing next-
generation ultra-compact spectroscopic systems for various applications such as label-free …
generation ultra-compact spectroscopic systems for various applications such as label-free …