Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …

In the quest for higher performance, the dimensions of field-effect transistors (FETs) continue
to decrease. However, the reduction in size of FETs comprising 3D semiconductors is limited …

Progress in the development of tunnel field-effect transistors (TFETs) is reviewed by
comparing experimental results and theoretical predictions against 16-nm FinFET CMOS …

After more than five decades, Moore's Law for transistors is approaching the end of the
international technology roadmap of semiconductors (ITRS). The fate of complementary …

van der Waals (vdW) heterojunctions composed of two-dimensional (2D) layered materials
are emerging as a solid-state materials family that exhibits novel physics phenomena that …

A comprehensive evaluation of sensitivity between double gate tunnel FET and n+ pocket
doped vertical tunnel FET based label-free biosensors is reported in this work. Both the …

During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …

Abstract Tunneling-field-effect-transistor (TFET) has emerged as an alternative for
conventional CMOS by enabling the supply voltage (V DD) scaling in ultra-low power …

Conventional field-effect transistors (FETs) have long been considered a fundamental
electronic component for a diverse range of devices. However, nanoelectronic circuits based …

Layered 2-D crystals embrace unique features of atomically thin bodies, dangling bond free
interfaces, and step-like 2-D density of states. To exploit these features for the design of a …