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Recent advances on multivalued logic gates: A materials perspective
The recent advancements in multivalued logic gates represent a rapid paradigm shift in
semiconductor technology toward a new era of hyper Moore's law. Particularly, the …
semiconductor technology toward a new era of hyper Moore's law. Particularly, the …
Nonvolatile memory devices based on polyimides bearing noncoplanar twisted biphenyl units containing carbazole and triphenylamine side-chain groups
YQ Li, RC Fang, AM Zheng, YY Chu, X Tao… - Journal of Materials …, 2011 - pubs.rsc.org
Two novel polyimides, PI (CzBD-BTFBPDA) and PI (TPABD-BTFBPDA), consisting of
alternating electron-donating 2, 2′-bis [4-(9H-carbazol-9-yl) phenyl]-or 2, 2′-bis [4 …
alternating electron-donating 2, 2′-bis [4-(9H-carbazol-9-yl) phenyl]-or 2, 2′-bis [4 …
Transparent Flash Memory Using Single Ta2O5 Layer for Both Charge-Trap** and Tunneling Dielectrics
We report reproducible multibit transparent flash memory in which a single solution-derived
Ta2O5 layer is used simultaneously as a charge-trap** layer and a tunneling layer. This is …
Ta2O5 layer is used simultaneously as a charge-trap** layer and a tunneling layer. This is …
Bipolar resistive switching characteristics of poly (3, 4-ethylene-dioxythiophene): Poly (styrenesulfonate) thin film
We investigated the reversible resistive switching of poly (3, 4-ethylenedioxythiophene):
polystyrenesulfonate (PEDOT: PSS) thin films sandwiched between Al electrodes. The J–V …
polystyrenesulfonate (PEDOT: PSS) thin films sandwiched between Al electrodes. The J–V …
Transition of nanocrystalline In (OH) 3 as spherical indium oxide nanoparticles embedded platelets
SK Kannan, P Thirnavukkarasu, R Jayaprakash… - Materials Science in …, 2016 - Elsevier
Indium oxide nanoparticles were synthesized by a co-precipitation method using the basic
raw materials like Indium (III) Chloride and the precipitating reagent as Ammonium …
raw materials like Indium (III) Chloride and the precipitating reagent as Ammonium …
Thickness dependence of high-k materials on the characteristics of MAHONOS structured charge trap flash memory
HW You, SM Oh, WJ Cho - Thin Solid Films, 2010 - Elsevier
The electrical characteristics of tunnel barrier engineered charge trap flash (TBE-CTF)
memory of MAHONOS (Metal/Al2O3/HfO2/SiO2/Si3N4/SiO2/Si) structure were investigated …
memory of MAHONOS (Metal/Al2O3/HfO2/SiO2/Si3N4/SiO2/Si) structure were investigated …
Electrical properties of HfO2 charge trap flash memory with SiO2/HfO2/Al2O3 engineered tunnel layer
SM Oh, H You, KS Kim, YH Lee, WJ Cho - Current Applied Physics, 2010 - Elsevier
The program/erase (P/E) characteristic of tunnel barrier engineered charge trap flash (TBE-
CTF) memory with MAHOS (Metal/Al2O3/HfO2/SiO2/Si) structure and MAHAHOS …
CTF) memory with MAHOS (Metal/Al2O3/HfO2/SiO2/Si) structure and MAHAHOS …
Critical role of top interface layer on the bipolar resistive switching of Al/PEDOT: PSS/Al memory device
The role of top interface layer in bipolar resistive switching (BRS) behaviors of Al/PEDOT:
PSS/Al memory devices was investigated via comparison with the Au/PEDOT: PSS/Al …
PSS/Al memory devices was investigated via comparison with the Au/PEDOT: PSS/Al …
Resistive switching effect for ZnO hybrid memory with metal-oxide nanocrystals
ZnO memory device with SnO2 nanocrystals embedded in a biphenyl-tertracarboxylic
dianhydride–phenylen diamine polyimide layer was fabricated, and its electrical properties …
dianhydride–phenylen diamine polyimide layer was fabricated, and its electrical properties …
Resistance switching properties of In2O3 nanocrystals memory device with organic and inorganic hybrid structure
A memory device with In 2 O 3 nanocrystals embedded in a biphenyl-tertracarboxylic
dianhydride-phenylen diamine (BPDA-PDA) polyimide layer on a ZnO layer was fabricated …
dianhydride-phenylen diamine (BPDA-PDA) polyimide layer on a ZnO layer was fabricated …