Sunlight-powered water splitting presents a promising strategy for converting intermittent
and virtually unlimited solar energy into energy-dense and storable green hydrogen. Since …

Since a few years, indium nitride promising properties for device applications have attracted
much attention worldwide. Huge efforts are dedicated to optimize indium nitride growth …

A boundary-temperature-controlled epitaxy, where the growth temperature of InN is
controlled at its maximum, is used to obtain high-electron-mobility InN layers on sapphire …

Sc 0.18 Al 0.82 N/GaN with state-of-the-art x-ray diffraction figures of merit grown by metal
modulated epitaxy under metal-rich conditions and a low substrate temperature of 400 C is …

The III-Nitride digital alloy (DA) is comprehensively studied as a short-period superlattice
nanostructure consisting of ultra-thin III-Nitride epitaxial layers. By stacking the ultra-thin III …

We report a systematic investigation on Mg doped InN epilayers grown by radio-frequency
plasma-assisted molecular beam epitaxy. Electrolyte capacitance voltage (ECV) combined …

InN-based III nitride quantum dot (QD) technology has attracted much attention for extended
potential applications in photonic devices covering a broad spectrum compared to …

We present results based on quantum mechanical estimates of the longest emission
wavelength for nitride laser diodes grown on c-plane GaN/sapphire substrates. The results …

Using first-principles methods and 8-band k· p simulations, we study the electronic structure
of an ultrathin quantum-well system consisting of a single layer of InN inserted in GaN …

Renewable solar fuel generation either via photovoltaic (PV) cells or via
photoelectrocatalytic solar fuel cells is expected to play a central role in the way energy is …