Physics of copper in silicon
AA Istratov, ER Weber - Journal of The Electrochemical Society, 2001 - iopscience.iop.org
This article reviews the progress made in the studies of copper in silicon over the last
several years and puts forward a comprehensive model of the behavior of copper in silicon …
several years and puts forward a comprehensive model of the behavior of copper in silicon …
Surface voltage and surface photovoltage: history, theory and applications
DK Schroder - Measurement Science and Technology, 2001 - iopscience.iop.org
Surface voltage and surface photovoltage measurements have become important
semiconductor characterization tools, largely because of the availability of commercial …
semiconductor characterization tools, largely because of the availability of commercial …
Surface photovoltage phenomena: theory, experiment, and applications
L Kronik, Y Shapira - Surface science reports, 1999 - Elsevier
The theoretical concepts, experimental tools, and applications of surface photovoltage (SPV)
techniques are reviewed in detail. The theoretical discussion is divided into two sections …
techniques are reviewed in detail. The theoretical discussion is divided into two sections …
Carrier lifetimes in silicon
DK Schroder - IEEE transactions on Electron Devices, 1997 - ieeexplore.ieee.org
Carrier lifetimes in semiconductors are being rediscovered by the Si IC community, because
the lifetime is a very effective parameter to characterize the purity of a material or device. It …
the lifetime is a very effective parameter to characterize the purity of a material or device. It …
Iron contamination in silicon technology
This article continues the review of fundamental physical properties of iron and its
complexes in silicon (Appl. Phys. A 69, 13 (1999)), and is focused on ongoing applied …
complexes in silicon (Appl. Phys. A 69, 13 (1999)), and is focused on ongoing applied …
Electrical properties and recombination activity of copper, nickel and cobalt in silicon
AA Istratov, ER Weber - Applied physics A, 1998 - Springer
This article combines an extensive literature review of new experimental data on properties
of Cu, Ni and Co and their precipitates in silicon with a discussion of experimental data …
of Cu, Ni and Co and their precipitates in silicon with a discussion of experimental data …
[LIVRE][B] Crystal Growth and Evaluation of Silicon for VLSI and ULSI
G Eranna - 2015 - api.taylorfrancis.com
Silicon, as a single-crystal semiconductor, has brought about a great revolution in the field of
electronics and has touched almost all fields of science and technology. Though available …
electronics and has touched almost all fields of science and technology. Though available …
Ge (001) surface cleaning methods for device integration
Germanium (Ge), with its higher hole and electron mobility than silicon, is a promising
candidate to replace silicon for future complementary metal-oxide-semiconductor (CMOS) …
candidate to replace silicon for future complementary metal-oxide-semiconductor (CMOS) …
Recombination activity of copper in silicon
R Sachdeva, AA Istratov, ER Weber - Applied Physics Letters, 2001 - pubs.aip.org
The carrier recombination activity of copper in n-type and p-type silicon has been
investigated. The minority carrier diffusion length has been found to decrease monotonically …
investigated. The minority carrier diffusion length has been found to decrease monotonically …
Study of sputtered Cu2ZnSnS4 thin films on Si
Integrating commercialized Si solar cells with eco-friendly and earth-abundant Cu 2 ZnSnS
4 (CZTS) film is a promising method to increase power conversion efficiency and hence …
4 (CZTS) film is a promising method to increase power conversion efficiency and hence …