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Strained-silicon heterojunction bipolar transistor
S Persson, M Fjer, E Escobedo-Cousin… - … on Electron Devices, 2010 - ieeexplore.ieee.org
Experimental and modeling results are reported for high-performance strained-silicon
heterojunction bipolar transistors (HBTs), comprising a tensile strained-Si emitter and a …
heterojunction bipolar transistors (HBTs), comprising a tensile strained-Si emitter and a …
Improving the high-frequency performance of SiGe HBTs by a global additional uniaxial stress
A global additional uniaxial stress ranging from− 1GPa to 1GPa along different directions
has been applied to SiGe HBTs in order to improve the high-frequency performance of these …
has been applied to SiGe HBTs in order to improve the high-frequency performance of these …
Low frequency noise in strained Si heterojunction bipolar transistors
M Fjer, S Persson, E Escobedo-Cousin… - IEEE transactions on …, 2011 - ieeexplore.ieee.org
The low frequency noise performance of strained Si heterojunction bipolar transistors (sSi
HBTs) is presented for the first time. Conventional SiGe HBTs and Si bipolar junction …
HBTs) is presented for the first time. Conventional SiGe HBTs and Si bipolar junction …
Design of a novel strained-SI HBT with virtual substrate for high current gain-breakdown voltage product
D **, Z Wang, Y Guo, W Zhang… - 2015 IEEE 16th …, 2015 - ieeexplore.ieee.org
In order to weaken the lattice self-heating effect of strained-Si HBT with vertical substrate, a
trapezoid Ge do** profile in base is proposed and the device model is established with …
trapezoid Ge do** profile in base is proposed and the device model is established with …
具有高电流增益-击穿电压优值的新型应变 Si/SiGe HBT
金冬月， 胡瑞心， 张万荣， 高光渤， 王肖， 付**… - 北京工业大学 …, 2015 - journal.bjut.edu.cn
为了改善器件的高压大电流处理能力, 利用SILVACOTCAD 建立了应变Si/SiGe HBT 模型,
分析了虚拟衬底设计对电流增益的影响. 虚拟衬底可在保持基区-集电区界面应力不变的情况下 …
分析了虚拟衬底设计对电流增益的影响. 虚拟衬底可在保持基区-集电区界面应力不变的情况下 …
Noise performance in strained Si heterojunction bipolar transistors
M Fjer, S Persson, E Escobedo-Cousin… - 2011 Proceedings of …, 2011 - ieeexplore.ieee.org
In this paper, a study of the noise performance of strained Si Heterojunction Bipolar
Transistors (sSi HBTs) is presented. This novel device exhibits low noise levels compared …
Transistors (sSi HBTs) is presented. This novel device exhibits low noise levels compared …