Development and analysis of wafer-bonded four-junction solar cells based on antimonides with 42% efficiency under concentration

F Predan, O Höhn, D Lackner, A Franke… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
The highest solar cell efficiencies today are reached with four-junction devices under
concentrated illumination. The optimal bandgap combination for realistic four-junction cells …

Increasing transferability between design and epitaxial growth of multi-junction solar cells

P Schygulla, M Klitzke, O Höhn, F Predan… - AIP Conference …, 2022 - pubs.aip.org
In this worN we report on a procedure to increase the reproducibility of multi-junction solar
cell growth. This is achieved by applying a systematic offset to room-temperature …

Hall characterization of epitaxial GaSb and AlGaAsSb layers using pn junctions on GaSb substrates

F Predan, J Ohlmann, S Mrabet, F Dimroth… - Journal of Crystal …, 2018 - Elsevier
Abstract The Hall Van-der-Pauw method is widely used to assess the electrical properties of
GaSb based semiconductor layers. Semi-insulating GaSb substrates are not available, and …

[HTML][HTML] Effects of thermal annealing on structural and electrical properties of surface-activated n-GaSb/n-GaInP direct wafer bonds

F Predan, A Kovács, J Ohlmann, D Lackner… - Journal of Applied …, 2017 - pubs.aip.org
A study on the microstructure of argon-beam activated n-GaSb/n-Ga 0.32 In 0.68 P bond
interfaces is presented, focusing on the behavior of the bond upon thermal annealing and …

Wafer-bonded GaInP/GaAs/GaInAs//GaSb four-junction solar cells with 43.8% efficiency under concentration

F Predan, A Franke, O Hoehn… - 2020 47th IEEE …, 2020 - ieeexplore.ieee.org
III-V based multi-junction solar cells with 4 to 6 junctions reach the highest efficiencies for the
conversion of solar energy today. We present the latest results on the development of a …

Modeling the Output Performance of Al0.3Ga0.7As/InP/Ge Triple-Junction Solar Cells for a Venus Orbiter Space Station

T Sumaryada, P Fitriansyah, A Sofyan, H Syafutra - Photonics, 2019 - mdpi.com
The performance of Al0. 3Ga0. 7As/InP/Ge triple-junction solar cells (TJSC) at the
geosynchronous orbit of Venus had been simulated in this paper by assuming that the solar …

[PDF][PDF] Developments for wafer-bonded four-junction solar cells based on GaSb

F Predan, D Lackner, E Oliva, A Kovács… - 7th World Conference …, 2018 - researchgate.net
The highest solar cell efficiencies today are reached with four-junction devices under
concentrated illumination. One multi-junction cell concept with prospects of reaching highest …

Low-temperature wafer-wafer bonding for particle detection

J Wüthrich - 2023 - research-collection.ethz.ch
Given the omnipresence and economical availability of silicon semiconductor processes, it
is no surprise that direct detection particle pixel detectors are commonly fabricated using …

Fabrication of highly efficient four-junction solar cells by surface-activated wafer-bonding

F Predan, S Heckelmann, M Niemeyer… - … Workshop on Low …, 2017 - ieeexplore.ieee.org
We used surface-activated wafer-bonding (SAB) at low temperatures for the fabrication of
advanced four-junction solar cells. The bonded heterojunctions are optimized regarding …