[HTML][HTML] ASAP7: A 7-nm finFET predictive process design kit
We describe a 7-nm predictive process design kit (PDK) called the ASAP7 PDK, developed
in collaboration with ARM Ltd. for academic use. The PDK is realistic, based on current …
in collaboration with ARM Ltd. for academic use. The PDK is realistic, based on current …
[BOOK][B] Fundamentals of electromigration
J Lienig, M Thiele, J Lienig, M Thiele - 2018 - Springer
This chapter investigates in detail the actual low-level migration processes. A solid
grounding in the physics of electromigration (EM) and its specific effects on the interconnect …
grounding in the physics of electromigration (EM) and its specific effects on the interconnect …
System technology co-optimization for advanced integration
Advanced integration and packaging will drive the scaling of computing systems in the next
decade. Diversity in performance, cost and scale of the emerging systems implies that …
decade. Diversity in performance, cost and scale of the emerging systems implies that …
NeuroXplorer 1.0: An extensible framework for architectural exploration with spiking neural networks
Recently, both industry and academia have proposed many different neuromorphic
architectures to execute applications that are designed with Spiking Neural Network (SNN) …
architectures to execute applications that are designed with Spiking Neural Network (SNN) …
Design and Implementation of a Scribe Line Measurement Transistor Test Array Structure in 14nm FinFET CMOS Technology
M Gupta - 2015 - repositories.lib.utexas.edu
Submicron fin-shaped field effect transistor (FinFET) process technologies pose a variety of
challenges for foundries ram** designs into production due to parameter variation …
challenges for foundries ram** designs into production due to parameter variation …
Two-dimensional materials for future information technology: status and prospects
Over the past 70 years, the semiconductor industry has undergone transformative changes,
largely driven by the miniaturization of devices and the integration of innovative structures …
largely driven by the miniaturization of devices and the integration of innovative structures …
Toward the 5nm technology: layout optimization and performance benchmark for logic/SRAMs using lateral and vertical GAA FETs
In this paper, we present a layout and performance analysis of logic and SRAM circuits for
vertical and lateral GAA FETs using 5nm (iN5) design rules. Extreme ultra-violet lithography …
vertical and lateral GAA FETs using 5nm (iN5) design rules. Extreme ultra-violet lithography …
3nm Gate-All-Around (GAA) Design-Technology Co-Optimization (DTCO) for succeeding PPA by Technology
3nm Gate-All-Around (GAA) technology is introduced to suggest the future of logic transistor
with performance, power, and area (PPA) benefit. However, as with the recent advanced …
with performance, power, and area (PPA) benefit. However, as with the recent advanced …
DTCO at N7 and beyond: patterning and electrical compromises and opportunities
At 7nm and beyond, designers need to support scaling by identifying the most optimal
patterning schemes for their designs. Moreover, designers can actively help by exploring …
patterning schemes for their designs. Moreover, designers can actively help by exploring …
Physical design and FinFETs
FinFETs have recently overtaken bulk CMOS transistors as the device of choice for systems-
on-chip. This paper provides some background on FinFETs together with their associated …
on-chip. This paper provides some background on FinFETs together with their associated …