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III-V junctionless gate-all-around nanowire MOSFETs for high linearity low power applications
III-V junctionless gate-all-around (GAA) nanowire MOSFETs (NWFETs) are experimentally
demonstrated for the first time. Source/drain resistance and thermal budget are minimized by …
demonstrated for the first time. Source/drain resistance and thermal budget are minimized by …
High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3 nanofiber networks
Abstract Although In 2 O 3 nanofibers (NFs) are well-known candidates as active materials
for next-generation, low-cost electronics, these NF based devices still suffer from high …
for next-generation, low-cost electronics, these NF based devices still suffer from high …
Different characteristics of InGaN/GaN multiple quantum well heterostructures grown on m-and r-planes of a single n-GaN nanowire using metalorganic chemical …
The growth behavior of coaxial nonpolar (m-plane) and semipolar (r-plane) oriented multiple
quantum well (MQW) heterostructures simultaneously deposited under the same …
quantum well (MQW) heterostructures simultaneously deposited under the same …
Low Voltage Operating Field Effect Transistors with Composite In2O3–ZnO–ZnGa2O4 Nanofiber Network as Active Channel Layer
Field effect transistors (FETs), incorporating metal-oxide nanofibers as the active conductive
channel, have the potential for driving the widespread application of nanowire or nanofiber …
channel, have the potential for driving the widespread application of nanowire or nanofiber …
High performance electronic devices based on nanofibers via a crosslinking welding process
Recently, metal oxide nanofibers fabricated by electrospinning have been considered as
promising components for next-generation electronic devices. Unfortunately, the nanofiber …
promising components for next-generation electronic devices. Unfortunately, the nanofiber …
[PDF][PDF] Highly conducting In2O3 nanowire network with passivating ZrO2 thin film for solution-processed field effect transistors
In this study, we demonstrate solution-processed In2O3 NWFETs for conventional bottom
gate top contacts (BGTC structure) with a multiple nanowire network. Electrospinning is …
gate top contacts (BGTC structure) with a multiple nanowire network. Electrospinning is …
Simultaneous thermoelectric and optoelectronic characterization of individual nanowires
Semiconducting nanowires have been explored for a number of applications in
optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in …
optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in …
High-frequency characterization of thermionic charge transport in silicon-on-insulator nanowire transistors
We report on DC and microwave electrical transport measurements in silicon-on-insulator
nano-transistors at low and room temperature. At low source-drain voltage, the DC current …
nano-transistors at low and room temperature. At low source-drain voltage, the DC current …
Enhanced performance of In2O3 nanowire field effect transistors with controllable surface functionalization of Ag nanoparticles
L Wu, J Xu, Q Li, Z Fan, F Mei, Y Zhou, J Yan… - …, 2020 - iopscience.iop.org
Abstract Indium oxide (In 2 O 3) nanowire field effect transistors (FETs) have great potential
in electronic and sensor applications owing to their suitable band width and high electron …
in electronic and sensor applications owing to their suitable band width and high electron …
Transconductance linearity analysis of 1-D, nanowire FETs in the quantum capacitance limit
A Razavieh, DB Janes… - IEEE transactions on …, 2013 - ieeexplore.ieee.org
The impact of channel material and dimensionality on the linearity of nanowire transistors is
studied theoretically. This paper also evaluates various scattering mechanisms in this …
studied theoretically. This paper also evaluates various scattering mechanisms in this …