Non-trivial spin arrangements in magnetic materials give rise to the topological Hall effect
observed in compounds with a non-centrosymmetric cubic structure hosting a skyrmion …

Some magnetically ordered phases of the Mn 5 Si 3 crystal are proving to be prototypes for
the study of the new fundamental spin physics related to the spontaneous breaking of the …

Germanium manganese compounds exhibit a variety of stable and metastable phases with
different stoichiometries. These materials entail interesting electronic, magnetic, and thermal …

Tensile-strained and n-doped Ge has emerged as a potential candidate for the realization of
optoelectronic devices that are compatible with the mainstream silicon technology. Tensile …

Spin injection in high-quality epitaxial M n 5 G e 3 Schottky contacts on n-type Ge has been
investigated using a three-terminal Hanle effect measurement. Clear Hanle and inverted …

We report the temperature-dependent magnetic and structural properties of epitaxial Mn 5
Ge 3 thin films grown on Ge substrates. Utilizing density-functional theory (DFT) calculations …

In this paper, we revisit the theory of point defect diffusion in silicon using atomistic
calculations. In the first part, we discuss on the concept of effective migration energy. We use …

In this paper, a phenomenological model is used to calculate magneto-caloric properties of
Ge 0.95 Mn 0.05 films fabricated with substrate temperatures of 85, 100, and 120∘ C …

High crystalline quality Mn 5 Ge 3 films with thicknesses ranging 4–200 nm have been
grown on Ge (111) substrates by solid phase epitaxy. The basal hexagonal plane of Mn 5 …

This paper presents a novel methodology for growing highly ordered arrays of self-
assembled manganese-germanium (MnGe) nanocrystals (NCs) on an insulating SiO₂ …