Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …

GaAsBi has been researched as a candidate material for optoelectronic devices for around
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …

We develop an atomistic, nearest-neighbor sp 3 s* tight-binding Hamiltonian to investigate
the electronic structure of dilute bismide alloys of GaP and GaAs. Using this model, we …

The GaBi x As 1− x bismide III-V semiconductor system remains a relatively underexplored
alloy particularly with regards to its detailed electronic band structure. Of particular …

We present measurements of the electron Hall mobility in n-type GaAs 1− x Bi x epilayers.
We observed no significant degradation in the electron mobility with Bi incorporation in …

Bismuth-containing III-V alloys open-up a range of possibilities for practical applications in
semiconductor lasers, photovoltaics, spintronics, photodiodes, and thermoelectrics. Of …

The structural and optical properties of GaAs1− xBix alloys for x up to 0.108 have been
investigated by high resolution X‐ray diffraction and photoluminescence (PL). At room …

We studied the effect of Bi incorporation on the hole mobility in the dilute bismide alloy GaAs
1-x Bi x using electrical transport (Hall) and photoluminescence (PL) techniques. Our …

The incorporation of bismuth (Bi) in GaAs results in a large reduction of the band gap energy
(E g) accompanied with a large increase in the spin-orbit splitting energy (△ SO), leading to …

Band gap alignment in GaAs 1− x Bi x/GaAs quantum wells (QWs) was studied
experimentally by photoreflectance (PR) and theoretically, ab initio, within the density …