Semiconductor multimaterial optical fibers for biomedical applications

L Shen, C Teng, Z Wang, H Bai, S Kumar, R Min - Biosensors, 2022 - mdpi.com
Integrated sensors and transmitters of a wide variety of human physiological indicators have
recently emerged in the form of multimaterial optical fibers. The methods utilized in the …

Formation mechanism of cellular structures during unidirectional growth of binary semiconductor Si-rich SiGe materials

R Gotoh, K Fujiwara, X Yang, H Koizumi… - Applied Physics …, 2012 - pubs.aip.org
The formation mechanism of a cellular structure during the growth of Si-rich SiGe crystals
was studied by in situ observation. We directly observed the morphological transformation of …

Effect of free surface and gravity on silicon dissolution in germanium melt

N Armour, S Dost, B Lent - Journal of Crystal Growth, 2007 - Elsevier
Silicon germanium (SiGe) is an important emerging compound semiconductor material. To
produce quality bulk material by solution or melt techniques, a good understanding of the …

Adaptive phase field modeling of morphological instability and facet formation during directional solidification of SiGe alloys

HK Lin, HY Chen, CW Lan - Journal of crystal growth, 2014 - Elsevier
An adaptive phase field model is used to study the morphological instability and the facet
formation during a directional solidification of SiGe alloys. Using highly anisotropic surface …

Numerical simulation of thermo-solutal Marangoni convection in a floating half-zone with radiation effects under zero gravity

C **, Y Okano, H Minakuchi, S Dost - … Journal of Heat and Mass Transfer, 2022 - Elsevier
Numerical simulations of thermo-solutal Marangoni convection in a floating half SiGe zone
with radiation effects under zero gravity have been carried out. In this system, thermal and …

The critical growth velocity for planar-to-faceted interfaces transformation in SiGe crystals

X Yang, K Fujiwara, NV Abrosimov, R Gotoh… - Applied Physics …, 2012 - pubs.aip.org
Crystal-melt interface morphological transformation of differently oriented SiGe crystals with
different Ge concentrations was observed, and the effect of Ge concentration on critical …

The effect of a static magnetic field on buoyancy-aided silicon dissolution into germanium melt

N Armour, S Dost - Journal of crystal growth, 2007 - Elsevier
The effect of a static magnetic field on silicon dissolution into the germanium melt has been
experimentally investigated. The experiments in this study show a trend to higher dissolution …

Effect of a static magnetic field on silicon transport in liquid phase diffusion growth of SiGe

N Armour, S Dost - Crystal Research and Technology: Journal …, 2010 - Wiley Online Library
Liquid phase diffusion experiments have been performed without and with the application of
a 0.4 T static magnetic field using a three‐zone DC furnace system. SiGe crystals were …

Silicon transport under rotating and combined magnetic fields in liquid phase diffusion growth of SiGe

N Armour, S Dost - Crystal Research and Technology: Journal …, 2010 - Wiley Online Library
The effect of applied rotating and combined (rotating and static) magnetic fields on silicon
transport during the liquid phase diffusion growth of SiGe was experimentally studied. 72 …

Liquid phase diffusion growth of SiGe single crystals under magnetic fields

N Armour, M Yildiz, E Yildiz, S Dost - ECS Transactions, 2008 - iopscience.iop.org
The manuscript presents the results of a combined experimental and modeling study on the
Liquid Phase Diffusion (LPD) growth of single crystal SixGe1-x on Germanium with and with …