A sputter target assembly includes a cobalt target diffusion bonded to an aluminum or
copper backing plate by means of a titanium interlayer. The sputter target assembly may be …

A method of producing a sputter target assembly including a tungsten-titanium target
attached to a titanium backing plate. The method includes consolidating a tungsten-titanium …

(57) ABSTRACT A cobalt-chromium-boron-platinum Sputtering target alloy having multiple
phases. The alloy can include Cr, B, Ta, Nb, C, Mo, Ti, V, W, Zr, Zn, Cu, Hf, O, Si or N. The …

US5234487A - Method of producing tungsten-titanium sputter targets and targets produced
thereby - Google Patents US5234487A - Method of producing tungsten-titanium sputter targets …

(57) ABSTRACT A sputter target comprises a plurality of materials. The plurality of materials
includes at least a first material and a second material. The first material is comprised of …

Tungsten-titanium sputtering targets with improved characteristics are made from high-purity
tungsten powder and a second powder consisting of high-purity titanium hydride powder or …

This invention relates to the joining of dense bodies of refractory metal Such as tungsten or
molybdenum to car bonaceous bodies, and more particularly to the employment of reaction …

A method of manufacturing metal silicide targets or alloy targets for sputtering use comprises
the steps of (a) mechanically alloying silicon and a metal to provide a metal silicide powder …

The present invention relates to a method of fabricating a semiconductor device, which
comprises a formation of contact holes in an interlayer insulating film formed on a silicon …

A cobalt-chromium-boron-platinum sputtering target alloy having multiple phases. The alloy
can include Cr, B, Ta, Nb, C, Mo, Ti, V, W, Zr, Zn, Cu, Hf, O, Si or N. The alloy is prepared by …