A survey on fault injection methods of digital integrated circuits

M Eslami, B Ghavami, M Raji, A Mahani - Integration, 2020 - Elsevier
One of the most popular methods for reliability assessment of digital circuits is Fault Injection
(FI) in which the behavior of the circuit is simulated in presence of faults. In this paper, we …

Radiation effects in a post-Moore world

DM Fleetwood - IEEE Transactions on Nuclear Science, 2021 - ieeexplore.ieee.org
An overview is presented of the significant influences of Moore's Law scaling on radiation
effects on microelectronics, focusing on historical trends and future needs. A number of …

Physics of multiple-node charge collection and impacts on single-event characterization and soft error rate prediction

JD Black, PE Dodd, KM Warren - IEEE Transactions on Nuclear …, 2013 - ieeexplore.ieee.org
Physical mechanisms of single-event effects that result in multiple-node charge collection or
charge sharing are reviewed and summarized. A historical overview of observed circuit …

Impact of scaling on the soft error sensitivity of bulk, FDSOI and FinFET technologies due to atmospheric radiation

G Hubert, L Artola, D Regis - Integration, 2015 - Elsevier
This paper investigates the impact of terrestrial radiation on soft error (SE) sensitivity along
the very large-scale integration (VLSI) roadmap of bulk, FDSOI and finFET nano-scale …

Ionizing Radiation Effectsin Electronics

M Bagatin, S Gerardin - 2016 - api.taylorfrancis.com
There is an invisible enemy that constantly threatens the operation of electronics: ionizing
radiation. From sea level to outer space, ionizing radiation is virtually everywhere. At sea …

Fault simulation and emulation tools to augment radiation-hardness assurance testing

HM Quinn, DA Black, WH Robinson… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
As of 2013, the gold standard for assessing radiation-hardness assurance (RHA) for a
system, subsystem, or a component is accelerated radiation testing and/or pulsed laser …

Impact of technology scaling on SRAM soft error rates

I Chatterjee, B Narasimham… - … on Nuclear Science, 2014 - ieeexplore.ieee.org
Soft error rates for triple-well and dual-well SRAM circuits over the past few technology
generations have shown an apparently inconsistent behavior. This work compares the …

Double node charge sharing SEU tolerant latch design

K Katsarou, Y Tsiatouhas - 2014 IEEE 20th International On …, 2014 - ieeexplore.ieee.org
Single event upsets (SEUs) that affect adjacent nodes in a design, by charge sharing
mechanisms among these nodes, are a great concern in nanometer SRAMs, since pairs of …

Anthology of the development of radiation transport tools as applied to single event effects

RA Reed, RA Weller, A Akkerman… - … on Nuclear Science, 2013 - ieeexplore.ieee.org
This anthology contains contributions from eleven different groups, each develo** and/or
applying Monte Carlo-based radiation transport tools to simulate a variety of effects that …

Single-event transient modeling in a 65-nm bulk CMOS technology based on multi-physical approach and electrical simulations

G Hubert, L Artola - IEEE Transactions on Nuclear Science, 2013 - ieeexplore.ieee.org
This paper presents a SET predictive methodology based on coupled MUSCA SEP3 and
electrical simulations (CADENCE tool). The method is validated by SET measurements on …