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Synaptogen: A cross-domain generative device model for large-scale neuromorphic circuit design
T Hennen, L Brackmann, T Ziegler… - … on Electron Devices, 2024 - ieeexplore.ieee.org
We present a fast generative modeling approach for resistive memories that reproduces the
complex statistical properties of real-world devices. By training on extensive measurement …
complex statistical properties of real-world devices. By training on extensive measurement …
Cueing effect of attention among nurses with different anxiety levels: An EEG study
Y Si, P Li, X Wang, G Yao, C Liu, Y Liu, J Zhang… - Medical & Biological …, 2023 - Springer
The attention to cueing among nurses with anxiety affects their nursing quality seriously.
Nevertheless, the neural mechanism of attention under anxiety among nurses has not been …
Nevertheless, the neural mechanism of attention under anxiety among nurses has not been …
Physical Origin of Threshold Switching in Amorphous Chromium‐Doped V2O3
Devices made of amorphous thin films of the prototypical Mott‐insulator chromium‐doped
V2O3 show a threshold and negative differential resistance effect after an electroforming …
V2O3 show a threshold and negative differential resistance effect after an electroforming …
A Statistical Study of Resistive Switching Parameters in Au/Ta/ZrO2(Y)/Ta2O5/TiN/Ti Memristive Devices
D Maldonado, AI Belov, MN Koryazhkina… - … status solidi (a), 2023 - Wiley Online Library
Variability is an inherent property of memristive devices based on the switching of resistance
in a simple metal–oxide–metal structure compatible with the standard complementary metal …
in a simple metal–oxide–metal structure compatible with the standard complementary metal …
Harnessing stochasticity and negative differential resistance for unconventional computation
In jüngster Zeit hat das Interesse an Materialien mit ungewöhnlichen elektronischen
Eigenschaften wie starker Nichtlinearität, Hysterese und Speicherfähigkeit wieder …
Eigenschaften wie starker Nichtlinearität, Hysterese und Speicherfähigkeit wieder …
A Compact Model for Ovonic Threshold Switching Based on a Delay Circuit
MM Al Chawa, R Tetzlaff, D Bedau… - … on Modern Circuits …, 2024 - ieeexplore.ieee.org
This paper introduces an innovative compact model for two terminal Ovonic Threshold
Switch (OTS) selectors, optimized for circuit simulations. The internal state variable of these …
Switch (OTS) selectors, optimized for circuit simulations. The internal state variable of these …
A Statistical Study of Resistive Switching Parameters in Au/Ta/ZrO2 (Y)/Ta2O5/TiN/Ti Memristive Devices
D Maldondado Correa, F Jiménez Molinos… - 2022 - digibug.ugr.es
Variability is an inherent property of memristive devices based on the switching of resistance
in a simple metal–oxide–metal structure compatible with the standard complementary metal …
in a simple metal–oxide–metal structure compatible with the standard complementary metal …
A Weight Variation-Aware Training Method for Hardware Neuromorphic Chips
MH Oh - openreview.net
Hardware neuromorphic chips that mimic the biological nervous systems have recently
attracted significant attention due to their ultra-low power and parallel computation …
attracted significant attention due to their ultra-low power and parallel computation …