Temperature sensitivity of the electro-optical characteristics for mid-infrared (λ= 3–16 μm)-emitting quantum cascade lasers
The temperature dependences of the threshold current and slope efficiency, as represented
by their respective characteristic temperature coefficients T 0 and T 1, are discussed for …
by their respective characteristic temperature coefficients T 0 and T 1, are discussed for …
High-power mid-infrared (λ∼ 3-6 μm) quantum cascade lasers
The performances of mid-infrared (IR) quantum cascade lasers (QCLs) are now reaching a
maturity level that enables a variety of applications which require compact laser sources …
maturity level that enables a variety of applications which require compact laser sources …
Low-cost approaches to III–V semiconductor growth for photovoltaic applications
III–V semiconductors form the most efficient single-and multijunction photovoltaics. Metal–
organic vapor-phase epitaxy, which uses toxic and pyrophoric gas-phase precursors, is the …
organic vapor-phase epitaxy, which uses toxic and pyrophoric gas-phase precursors, is the …
Multidimensional conduction-band engineering for maximizing the continuous-wave (CW) wallplug efficiencies of mid-infrared quantum cascade lasers
By tailoring the active-region quantum wells and barriers of 4.5-5.0-μm-emitting quantum
cascade lasers (QCLs), the device performances dramatically improve. Deep-well QCLs …
cascade lasers (QCLs), the device performances dramatically improve. Deep-well QCLs …
Development of GaInP solar cells grown by hydride vapor phase epitaxy
We demonstrate the growth of homojunction GaInP solar cells by dynamic hydride vapor
phase epitaxy for the first time. Simple unpassivated n-on-p structures grown in an inverted …
phase epitaxy for the first time. Simple unpassivated n-on-p structures grown in an inverted …
MOCVD-Grown In0.22Ga0.78As Metamorphic Buffer Layer with Ultralow Threading Dislocation Density
Compositional step-graded In0. 22Ga0. 78As metamorphic buffer layers (MBLs) with a
series of thick individual step buffer layers on GaAs substrates are demonstrated by metal …
series of thick individual step buffer layers on GaAs substrates are demonstrated by metal …
InGaAs/AlInAs strain-compensated superlattices grown on metamorphic buffer layers for low-strain, 3.6 μm-emitting quantum-cascade-laser active regions
Short-wavelength (λ∼ 3.6 μm) quantum-cascade-laser (QCL) designs, employing a
metamorphic buffer layer (MBL) on a GaAs substrate, have been developed for strong …
metamorphic buffer layer (MBL) on a GaAs substrate, have been developed for strong …
Hydride vapor phase epitaxy for current III–V and nitride semiconductor compound issues
E Gil, Y André, R Cadoret, A Trassoudaine - Handbook of Crystal Growth, 2015 - Elsevier
Hydride vapor phase epitaxy (HVPE) was part of the very first vapor phase epitaxy
processes developed for the growth of III–V semiconductor layers. HVPE's features—the …
processes developed for the growth of III–V semiconductor layers. HVPE's features—the …
Light-trap** structures fabricated in situ for ultrathin III-V solar cells
Here, we describe a fully in situ method of fabricating light-scattering structures on III-V
materials that generates a rough morphology via vapor phase etching and redeposition …
materials that generates a rough morphology via vapor phase etching and redeposition …
Effects of dislocation strain on the epitaxy of lattice-mismatched AlGaInP layers
Strain fields arising from a non-uniform distribution of misfit dislocations in an underlying
compositionally graded buffer are shown to be sufficiently strong to modify indium …
compositionally graded buffer are shown to be sufficiently strong to modify indium …