Despite technical efforts and upgrades, advances in complementary metal–oxide–
semiconductor circuits have become unsustainable in the face of inherent silicon limits. New …

Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …

Abstract Two-dimensional (2D) semiconductors, such as transition metal dichalcogenides,
provide an opportunity for beyond-silicon exploration. However, the lab to fab transition of …

Two-dimensional transition-metal dichalcogenides (TMDs) are of interest for beyond-silicon
electronics,. It has been suggested that bilayer TMDs, which combine good electrostatic …

Due to the constraints imposed by physical effects and performance degradation, silicon-
based chip technology is facing certain limitations in sustaining the advancement of Moore's …

The shrinking of transistors has hit a wall of material degradation and the specialized
electronic applications for complex scenarios have raised challenges in heterostructures …

Here we benchmark device-to-device variation in field-effect transistors (FETs) based on
monolayer MoS2 and WS2 films grown using metal-organic chemical vapor deposition …

Two-dimensional materials are promising candidates for future electronics due to
unmatched device performance at atomic limit and low-temperature heterogeneous …

Data-driven algorithms—such as signal processing and artificial neural networks—are
required to process and extract meaningful information from the massive amounts of data …

Complementary field-effect transistors—which have n-type and p-type field-effect transistors
(FETs) vertically stacked on top of each other—can boost area efficiency in integrated …