Review of radiation effects on ReRAM devices and technology
Y Gonzalez-Velo, HJ Barnaby… - … Science and Technology, 2017 - iopscience.iop.org
A review of the ionizing radiation effects on resistive random access memory (ReRAM)
technology and devices is presented in this article. The review focuses on vertical devices …
technology and devices is presented in this article. The review focuses on vertical devices …
[BOOK][B] Resistive random access memory (RRAM)
S Yu - 2016 - books.google.com
RRAM technology has made significant progress in the past decade as a competitive
candidate for the next generation non-volatile memory (NVM). This lecture is a …
candidate for the next generation non-volatile memory (NVM). This lecture is a …
Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films
Flexible and transparent resistive switching memories are highly desired for the construction
of portable and even wearable electronics. Upon optimization of the microstructure wherein …
of portable and even wearable electronics. Upon optimization of the microstructure wherein …
Structural and electrical response of emerging memories exposed to heavy ion radiation
Hafnium oxide-and GeSbTe-based functional layers are promising candidates in material
systems for emerging memory technologies. They are also discussed as contenders for …
systems for emerging memory technologies. They are also discussed as contenders for …
Hf0. 5Zr0. 5O₂-based ferroelectric field-effect transistors with HfO₂ seed layers for radiation-hard nonvolatile memory applications
C Liu, W **ao, Y Peng, B Zeng, S Zheng… - … on Electron Devices, 2021 - ieeexplore.ieee.org
Hf 0.5 Zr 0.5 O 2 (HZO)-based ferroelectric field-effect transistors (FeFETs) with HfO 2 seed
layer were investigated for radiation-hard nonvolatile memory applications. First, it was …
layer were investigated for radiation-hard nonvolatile memory applications. First, it was …
Heavy ion radiation effects on hafnium oxide-based resistive random access memory
Hafnium oxide-based resistive random access memory (RRAM)(TiN/HfO 2-x/Pt/Au) stacks
were irradiated with 1.1-GeV Au ions with fluences between 10 10 and 10 12 ions/cm 2 and …
were irradiated with 1.1-GeV Au ions with fluences between 10 10 and 10 12 ions/cm 2 and …
The Impact of X-Ray and Proton Irradiation on -Based Bipolar Resistive Memories
JS Bi, ZS Han, EX Zhang, MW McCurdy… - … on Nuclear Science, 2013 - ieeexplore.ieee.org
This paper investigates total-ionizing dose effects on the electrical characteristics of
\rmHfO_2/\rmHf-based bipolar resistive-random-access-memory (RRAM) devices. 10-keV x …
\rmHfO_2/\rmHf-based bipolar resistive-random-access-memory (RRAM) devices. 10-keV x …
Defect-induced phase transition in hafnium oxide thin films: comparing heavy ion irradiation and oxygen-engineering effects
Hafnium oxide acts as a functional dielectric in a variety of traditional and emerging
nonvolatile memory technologies. To investigate the effect of heavy ion irradiation on its …
nonvolatile memory technologies. To investigate the effect of heavy ion irradiation on its …
[HTML][HTML] Heavy ion irradiation induced phase transitions and their impact on the switching behavior of ferroelectric hafnia
The discovery of ferroelectric hafnium oxide enabled a variety of non-volatile memory
devices, like ferroelectric tunnel junctions or field-effect transistors. Reliable application of …
devices, like ferroelectric tunnel junctions or field-effect transistors. Reliable application of …
Investigation of single-bit and multiple-bit upsets in oxide RRAM-based 1T1R and crossbar memory arrays
In this paper, the susceptibility of oxide-based resistive switching random memory (RRAM)
to heavy ion strikes is investigated. A physics-based SPICE model calibrated with HfOx …
to heavy ion strikes is investigated. A physics-based SPICE model calibrated with HfOx …