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Linear magnetization dependence of the intrinsic anomalous Hall effect
The anomalous Hall effect is investigated experimentally and theoretically for ferromagnetic
thin films of Mn 5 Ge 3. We have separated the intrinsic and extrinsic contributions to the …
thin films of Mn 5 Ge 3. We have separated the intrinsic and extrinsic contributions to the …
Universal window for two-dimensional critical exponents
Two-dimensional condensed matter is realized in increasingly diverse forms that are
accessible to experiment and of potential technological value. The properties of these …
accessible to experiment and of potential technological value. The properties of these …
First-principles characterization of ferromagnetic for spintronic applications
In the active search for potentially promising candidates for spintronic applications, we focus
on the intermetallic ferromagnetic Mn 5 Ge 3 compound and perform accurate first-principles …
on the intermetallic ferromagnetic Mn 5 Ge 3 compound and perform accurate first-principles …
Magnetism in semiconductors mediated by impurity band carriers
We present a comprehensive study of ferromagnetism and magnetotransport in Mn-doped
germanium, grown with molecular-beam epitaxy. Ferromagnetism in Mn x Ge 1− x (0< x< …
germanium, grown with molecular-beam epitaxy. Ferromagnetism in Mn x Ge 1− x (0< x< …
Ferromagnetic percolation in MnxGe1− x dilute magnetic semiconductor
We have studied the magnetic and magnetotransport properties of Mn-doped Ge grown by
molecular-beam epitaxy. This group-IV dilute ferromagnetic semiconductor exhibits two …
molecular-beam epitaxy. This group-IV dilute ferromagnetic semiconductor exhibits two …
Structural and magnetic properties of Mn5Ge3 clusters in a dilute magnetic germanium matrix
C Bihler, C Jaeger, T Vallaitis, M Gjukic… - Applied Physics …, 2006 - pubs.aip.org
We have characterized the structural and magnetic properties of low-temperature molecular-
beam epitaxy grown Ge: Mn by means of high-resolution transmission electron microscopy …
beam epitaxy grown Ge: Mn by means of high-resolution transmission electron microscopy …
Epitaxial growth of Mn5Ge3/Ge (111) heterostructures for spin injection
Epitaxial Mn5Ge3/Ge (111) heterostructures were grown by Solid Phase Epitaxy (SPE)
method, which consists of a room temperature Mn deposition followed by thermal annealing …
method, which consists of a room temperature Mn deposition followed by thermal annealing …
Spin polarization and electronic structure of ferromagnetic Mn5Ge3 epilayers
Germanium‐based alloys hold great promise for future spintronics applications, due to their
potential for integration with conventional Si‐based electronics. High‐quality single phase …
potential for integration with conventional Si‐based electronics. High‐quality single phase …
Ferromagnetic germanide in Ge nanowire transistors for spintronics application
To explore spintronics applications for Ge nanowire heterostructures formed by thermal
annealing, it is critical to develop a ferromagnetic germanide with high Curie temperature …
annealing, it is critical to develop a ferromagnetic germanide with high Curie temperature …
Control of magnetic properties of epitaxial MnGeC films induced by carbon do**
We report the effects of carbon incorporation on the structural and magnetic properties of
epitaxial Mn 5 Ge 3 C x films grown on Ge (111) by the solid phase epitaxy method. This …
epitaxial Mn 5 Ge 3 C x films grown on Ge (111) by the solid phase epitaxy method. This …