Control and understanding of metal contacts to β-Ga2O3 single crystals: a review
H Kim - SN Applied Sciences, 2022 - Springer
Abstract Gallium oxide (Ga2O3) is a promising semiconductor for high power devices and
solar blind ultraviolet photodetectors due to its large bandgap, a high breakdown field, and …
solar blind ultraviolet photodetectors due to its large bandgap, a high breakdown field, and …
Vertical GaN power devices: Device principles and fabrication technologies—Part II
Vertical gallium nitride (GaN) power devices are enabling next-generation power electronic
devices and systems with higher energy efficiency, higher power density, faster switching …
devices and systems with higher energy efficiency, higher power density, faster switching …
Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination
X Guo, Y Zhong, X Chen, Y Zhou, S Su, S Yan… - Applied Physics …, 2021 - pubs.aip.org
This Letter studies the reverse leakage and breakdown mechanisms of vertical GaN-on-Si
Schottky barrier diodes (SBDs) with and without argon-implanted termination (ArIT). The …
Schottky barrier diodes (SBDs) with and without argon-implanted termination (ArIT). The …
[HTML][HTML] Ultrawide bandgap vertical β-(AlxGa1− x) 2O3 Schottky barrier diodes on free-standing β-Ga2O3 substrates
Ultrawide bandgap β-(Al x Ga 1− x) 2 O 3 vertical Schottky barrier diodes on (010) β-Ga 2 O
3 substrates are demonstrated. The β-(Al x Ga 1− x) 2 O 3 epilayer has an Al composition of …
3 substrates are demonstrated. The β-(Al x Ga 1− x) 2 O 3 epilayer has an Al composition of …
Vertical β-Ga2O3 metal–insulator–semiconductor diodes with an ultrathin boron nitride interlayer
In this work, we demonstrate the high performance of β-Ga 2 O 3 metal–insulator–
semiconductor (MIS) diodes. An ultrathin boron nitride (BN) interlayer is directly grown on …
semiconductor (MIS) diodes. An ultrathin boron nitride (BN) interlayer is directly grown on …
Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates
The electrical characteristics of Schottky contacts on individual threading dislocations (TDs)
with a screw-component in GaN substrates and the structures of these TDs were …
with a screw-component in GaN substrates and the structures of these TDs were …
Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current–voltage characteristic
We have demonstrated the fabrication process for a lateral p-type Schottky barrier diode
(SBD) with the annealed Mg ohmic contact layer on a MOVPE-grown p-GaN wafer and …
(SBD) with the annealed Mg ohmic contact layer on a MOVPE-grown p-GaN wafer and …
GaN vertical-channel junction field-effect transistors with regrown p-GaN by MOCVD
We report an experimental demonstration of GaN-based vertical-channel junction field-effect
transistors (VC-JFETs). A p-GaN regrowth by metalorganic chemical vapor deposition …
transistors (VC-JFETs). A p-GaN regrowth by metalorganic chemical vapor deposition …
Ga-polar GaN Camel diode enabled by a low-cost Mg-diffusion process
In this letter, we show that low-cost physical vapor deposition of Mg followed by a thermal
diffusion annealing process increases the effective barrier height at the metal/Ga-polar GaN …
diffusion annealing process increases the effective barrier height at the metal/Ga-polar GaN …
[HTML][HTML] Evidence of thermionic emission in forward biased β-Ga2O3 Schottky diodes at Boltzmann do** limit
A near-ideal and homogeneous β-Ga 2 O 3 Schottky diode with Co contact for a do**
level of∼ 4.2× 10 17 cm− 3 in the drift layer where the Boltzmann approximation is valid is …
level of∼ 4.2× 10 17 cm− 3 in the drift layer where the Boltzmann approximation is valid is …