A major obstacle limiting diamond electronics is dislocations, which deteriorate device
properties. As threading dislocations (TDs) are normally inherited from the substrate to the …

Accurate determination of the effective do** range within diamond thin films is important
for fine-tuning of electrical conductivity. Nevertheless, it is not easily attainable by the …

Crystal defects are abundant in synthetic diamond produced by chemical vapor deposition
(CVD). We present the first images of crystal defects in a bulk polycrystalline CVD diamond …

Diamond-based rectifiers are promising devices for the development of next-generation
power electronics. However, the present device structure limits current operation as low as 5 …

The emergence of wide band-gap (WBG) materials promises improved performance in
semiconductor devices, but also presents significant technical challenges. Develo** this …

Do** diamond layers for electronic applications has become straightforward during the
last two decades. However, dislocation generation in diamond during the microwave plasma …

Selective diamond growth on etched diamond substrates allows the development of 3D‐
type device geometries, which can make possible higher capacity, higher surface for …

The selective doped overgrowth of 3D mesa patterns and trenches has become an essential
fabrication step of advanced monolithic diamond-based power devices. The methodology …

For the fabrication of vertical power electronic components, the use of a freestanding highly
boron‐doped single crystal diamond substrate is mandatory, on top of which a thin low …

Epitaxial lateral growth will be required if complex diamond-based device architecture, such
as, for example, Metal-oxide-semiconductor Field-effect transistors (MOSFETs) or epitaxial …