This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …

Research on silicon nanowires has developed rapidly in recent years. This can best be
inferred from the sharply increasing number of publications in this field. In 2008, more than …

Over the past 30 years electronic applications have been dominated by complementary
metal oxide semiconductor (CMOS) devices. These combine p-and n-type field effect …

In this paper, the historical effects and benefits of Moore's law for semiconductor
technologies are reviewed, and it is offered that the rapid learning curve obtained to the …

With classical scaling of CMOS transistors according to Dennard's scaling rules running out
of steam, new possibilities to increase the functionality of an integrated circuit at a given …

Reconfigurable field effect transistors are an emerging class of electronic devices, which
exploit a structure with multiple independent gates to selectively adjust the charge carrier …

Nanowires are natural one-dimensional channels and offer new opportunities for advanced
electronic quantum transport experiments. We review recent progress on the synthesis of …

Self-assembled nanowires offer the prospect of accurate and scalable device engineering at
an atomistic scale for applications in electronics, photonics and biology. However …

We present novel multifunctional nanocircuits built from nanowire transistors that uniquely
feature equal electron and hole conduction. Thereby, the mandatory requirement to yield …

We present a vertical-silicon-nanowire-based p-type tunneling field-effect transistor (TFET)
using CMOS-compatible process flow. Following our recently reported n-TFET, a low …