Optically active defects in modified silicon oxide films on a silicon substrate have been
studied by low-temperature photoluminescence (PL) spectroscopy using excitation by …

Time‐resolved photoluminescence from Si nanocrystals produced by 1100 C thermal
annealing of SiO/SiO multilayers were investigated by tunable laser excitation, achieving a …

Silicon is one of the ''oldest''electronic materials and has served the microelectronics
industry for more than half a century. On the other hand, silicon is also a ''young''material …

Results of the investigation of photoluminescence (PL) mechanisms for silicon dioxide films
implanted with ions of silicon (100 keV; 7× 10 16 cm− 2) and carbon (50 keV; 7× 10 15–1.5× …

Low-temperature photoluminescence spectroscopy with pulsed synchrotron excitation is
applied to study the regularities of excitation and relaxation of both point defects and …

Photoluminescence (PL) from Eu-doped SiO 2 (SiON) thin films sputter-deposited in O 2, H 2
O vapor, or a mixture of O 2 and N 2 gases was characterized by excitation at a wavelength …

In this work we present an innovative method of creating Si quantum dots under pulsed ion-
beam exposure. The evolution of defect structure ODC (II)→ E′→ ODC (I)→ Si QDs in …

A comprehensive method to study semiconductor nanoparticles in thin film SiO _ 2 2
matrices has been developed. Selective and high-intensity synchrotron excitation allows the …

Recovering useful materials from agricultural waste into electronic materials remains
challenging. SiO2 nanoparticles were successfully extracted from rice straw ash by a sol–gel …

Temperature effects in the exciton photoluminescence specific to semiconductor quantum
dots (QDs) are reviewed using Si QDs as an example. The processes of direct and indirect …