The recent rise of semiconductor nanowires opens new opportunities for realizing high
efficiency photovoltaic devices at low cost due to the unique one-dimensional structure with …

III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

The innovation of band‐gap engineering in advanced materials caused by the alloying of
different semiconductors into solid‐solution nanostructures provides numerous opportunities …

The bottom-up fabrication of regular nanowire (NW) arrays on a masked substrate is
technologically relevant, but the growth dynamic is rather complex due to the superposition …

III-V ternary nanowires and nanowire heterostructures offer almost unlimited possibilities for
the band-gap design and can be integrated with Si electronic platform. Most of such …

With the continued maturation of III–V nanowire research, expectations of material quality
should be concomitantly raised. Ideally, III–V nanowires integrated on silicon should be …

We report the growth of InAs1–x Sb x nanowires (0≤ x≤ 0.15) grown by catalyst-free
molecular beam epitaxy on silicon (111) substrates. We observed a sharp decrease of …

Ternary semiconductor nanowire arrays enable scalable fabrication of nano-optoelectronic
devices with tunable bandgap. However, the lack of insight into the effects of the …

Growth and properties of the self‐catalyzed heterostructured GaP nanowires (NWs) with
GaP1− xAsx insertions in the form of nanodiscs (NDs) grown by means of molecular‐beam …

Understanding and controlling the composition of III-V ternary nanomaterials is essential for
band-gap tunability and fabrication of functional nanoheterostructures. The kinetic approach …