This work focuses on the investigation of radiation-induced defects responsible for the
degradation of silicon detector performance. Comparative studies of the defects induced by …

Defects in semiconductors have been studied for many years, in many cases with a view
toward controlling their behaviour through various forms of “defect engineering”. For …

The Large Hadron Collider (LHC) at the European Organization for Nuclear Research
(CERN) addresses some of today's most fundamental questions of particle physics, like the …

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …

In this work the thermal kinetics of the transformation from the divacancy (V 2) to the
divacancy-oxygen (V 2 O) complex has been studied in detail, and activation energies,(E a) …

Four different kinds of silicon materials (standard float zone—FZ, oxygen enriched FZ—
DOFZ, Czochralski—Cz and thin epitaxial layers grown on Cz substrates—Epi/Cz) have …

After low dose electron irradiation, annealing kinetics of divacancy-oxygen (V 2 O) and
vacancy-oxygen (VO) complexes in carbon-lean n-type magnetic Czochralski (MCZ) and …

Kinetics of degradation of the nonequilibrium charge carrier lifetime (τ) in Czochralski‐grown
(Cz) n‐Si irradiated with 1 MeV electrons at different temperatures in the range from 20 to …

Radiation defects introduced by the electrons and X-rays emitted by the linear Varian
TrueBeam type commercial therapy accelerators have been examined by combining various …

Two deep level transient spectroscopy (DLTS) electron emission signatures, previously
labeled E4 and E5, have been shown to be bistable with respect to minority carrier injection …