Challenges and Progress in Contact Development for PbTe‐based Thermoelectrics

P Sauerschnig, P Jood, M Ohta - ChemNanoMat, 2023 - Wiley Online Library
Over the decades, tremendous efforts have been put into develo** lead telluride (PbTe)‐
based thermoelectric materials, dramatically improving the thermoelectric figure of merit zT …

Thin film metallic glasses: Properties, applications and future

P Yiu, W Diyatmika, N Bönninghoff, YC Lu… - Journal of applied …, 2020 - pubs.aip.org
In this article, we provide a perspective overview of the iconic properties, recent application-
oriented research, and future commercialization opportunities of thin film metallic glasses …

Screening metal electrodes for thermoelectric PbTe

M Liu, X Zhang, Y Wu, Z Bu, Z Chen… - ACS Applied Materials …, 2023 - ACS Publications
Historically, both p-and n-type PbTe show extraordinary thermoelectric figures of merit within
300–600° C for power generation applications. A full realization of the potential of these high …

Improved High‐Temperature Material Stability and Mechanical Properties While Maintaining a High Figure of Merit in Nanostructured p‐Type PbTe‐Based …

P Sauerschnig, P Jood, M Ohta - Advanced Materials …, 2023 - Wiley Online Library
Material stability and mechanical properties of nanostructured p‐type Pb0. 993− xNaxGe0.
007Te (x= 0.02, 0.04) are improved by tuning dopant Na content, while maintaining a high …

Copper diffusion hindrance in Ti-TM (TM= W, Ru) alloys: A first-principles insight

HD Feng, YT Xu, Q Zhao, M Wen, ZY Zhao - Physica B: Condensed Matter, 2025 - Elsevier
This study utilizes DFT calculations to assess the effectiveness of Ti-TM (TM= W, Ru) alloys
in obstructing copper diffusion, a pivotal factor for semiconductor device reliability. The …

Opportunities for thermoelectric generators in supporting a low carbon economy

MRA Bhuiyan, H Mamur, ÖF Dilmaç, MA Üstüner - 2022 - icevirtuallibrary.com
Environmental pollution, global warming and increasing energy demands are urgent
challenges facing society. Governments all over the world have set a national policy target …

Tungsten-based thin film metallic glass as diffusion barrier between copper and silicon

PY Chen, JD You, CH Hsueh - Vacuum, 2025 - Elsevier
A qualified diffusion barrier layer in integrated circuits is essential to prevent the degradation
of devices due to the inter-diffusion between Cu and Si for Cu metallization. In this work, the …

AgNi alloy as a suitable barrier layer material for NbFeSb-Based half-Heusler thermoelectric modules

J Zhu, F Liu, B Gong, X Wang, W Ao, C Zhang… - Journal of Electronic …, 2019 - Springer
As a type of moderate-and high-temperature thermoelectric materials, half-Heusler
thermoelectric materials have a unique advantage in terms of their power factors and …

[PDF][PDF] Методики исследования электрического контактного сопротивления в структуре металлическая пленка–полупроводник

МЮ Штерн, ИС Караваев, МС Рогачев… - Физика и техника …, 2022 - scholar.archive.org
В термоэлементах электрическое сопротивление контактов существенным образом
влияет на их эффективность. В случае высоколегированных термоэлектрических …

Insights to unusual antiferromagnetic behavior and exchange coupling interactions in Mn23C6

ZK Yu, C Zhou, K Bao, ZQ Wang, EX Li… - Chinese …, 2025 - iopscience.iop.org
We report the structural, mechanical and electromagnetic properties of the intermetallic
compound Mn23C6. The bulk Mn23C6 sample had been synthesized using high …