The expansion of the electric vehicle market is driving the request for efficient and reliable
power electronic systems for electric energy conversion and processing. The efficiency, size …

Owing to its energy efficiency, silicon complementary metal–oxide–semiconductor (CMOS)
technology is the current driving force of the integrated circuit industry. Silicon's narrow …

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to
facilitate economic growth in a semiconductor industry that is silicon-based and currently …

Power and RF electronics applications have spurred massive investment into a range of
wide and ultrawide bandgap semiconductor devices which can switch large currents and …

The planar nature of the GaN heterojunction devices provides extended dimensions for
implementing monolithic power integrated circuits. This article presents a comprehensive …

A high-conductivity two-dimensional (2D) hole gas, analogous to the ubiquitous 2D electron
gas, is desirable in nitride semiconductors for wide-bandgap p-channel transistors. We …

Enhancement-mode (E-mode) buried p-channel GaN metal-oxide-semiconductor field-effect-
transistors (p-GaN-MOSFET's) with threshold voltage (V TH) of-1.7 V, maximum ON-state …

In this letter, an enhancement-mode (E-mode) GaN p-channel field-effect transistors (p-
FETs) with current density of− 5.6 mA/mm and ratio of 10 6 was demonstrated on a p …

High-performance p-channel transistors are crucial to implementing efficient complementary
circuits in wide-bandgap electronics, but progress on such devices has lagged far behind …

We report an enhancement-mode (E-mode)-channel GaN heterojunction field-effect
transistor with a metal-insulator-semiconductor gate structure. A 60 mV/dec subthreshold …