Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays
Q Cai, H You, H Guo, J Wang, B Liu, Z **e… - Light: Science & …, 2021 - nature.com
Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the
environmental, industrial, military, and biological fields. As a representative III-nitride …
environmental, industrial, military, and biological fields. As a representative III-nitride …
Progress in semiconductor diamond photodetectors and MEMS sensors
M Liao - Functional Diamond, 2022 - Taylor & Francis
Diamond with an ultra-wide bandgap shows intrinsic performance that is extraordinarily
superior to those of the currently available wide-bandgap semiconductors for deep …
superior to those of the currently available wide-bandgap semiconductors for deep …
Wide-bandgap semiconductor ultraviolet photodetectors
Industries such as the automotive, aerospace or military, as well as environmental and
biological research have promoted the development of ultraviolet (UV) photodetectors …
biological research have promoted the development of ultraviolet (UV) photodetectors …
III–nitride UV devices
MA Khan, M Shatalov, HP Maruska… - Japanese journal of …, 2005 - iopscience.iop.org
The need for efficient, compact and robust solid-state UV optical sources and sensors had
stimulated the development of optical devices based on III–nitride material system. Rapid …
stimulated the development of optical devices based on III–nitride material system. Rapid …
Realization of a high-performance GaN UV detector by nanoplasmonic enhancement
DB Li, XJ Sun, H Song, ZM Li, YR Chen, H Jiang… - 2012 - ir.ciomp.ac.cn
Three possible reasons are proposed as the cause the enhanced responsivities of the
detectors with Ag nanoparticles: i) the depletion width at the metal-semiconductor interface …
detectors with Ag nanoparticles: i) the depletion width at the metal-semiconductor interface …
High gain Ga2O3 solar-blind photodetectors realized via a carrier multiplication process
Ga_2O_3 photodetectors with interdigitated electrodes have been designed and fabricated,
and the Ga_2O_3 area exposed to illumination acts as the active layer of the photodetector …
and the Ga_2O_3 area exposed to illumination acts as the active layer of the photodetector …
III nitrides and UV detection
III nitrides and UV detection Page 1 Journal of Physics: Condensed Matter III nitrides and UV
detection To cite this article: E Muñoz et al 2001 J. Phys.: Condens. Matter 13 7115 View the …
detection To cite this article: E Muñoz et al 2001 J. Phys.: Condens. Matter 13 7115 View the …
[HTML][HTML] Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates
Epitaxial pin structures grown on native GaN substrates have been fabricated and used to
extract the impact ionization coefficients in GaN. The photomultiplication method has been …
extract the impact ionization coefficients in GaN. The photomultiplication method has been …
[ΒΙΒΛΙΟ][B] The handbook of photonics
Reflecting changes in the field in the ten years since the publication of the first edition, The
Handbook of Photonics, Second Edition explores recent advances that have affected this …
Handbook of Photonics, Second Edition explores recent advances that have affected this …
High-detectivity ultraviolet photodetectors based on laterally mesoporous GaN
Photodetectors for the ultraviolet (UV) range of the electromagnetic spectrum are in great
demand for several technologies, but require the development of novel device structures …
demand for several technologies, but require the development of novel device structures …