Antiferroelectrics have received blooming interests because of a wide range of potential
applications in energy storage, solid-state cooling, thermal switch, transducer, actuation, and …

In the present hyper-scaling era, memory technology is advancing owing to the demand for
high-performance computing and storage devices. As a result, continuous work on …

Dielectric electrostatic capacitors, because of their ultrafast charge–discharge, are desirable
for high-power energy storage applications. Along with ultrafast operation, on-chip …

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …

A continuous exponential rise has been observed in the storage and processing of the data
that may not curtail in the foreseeable future. The required data processing speed and …

Modern microelectronic systems and applications demand an every increasing amount of
non‐volatile memories that are fast, reliable, and consume little power. Memory concepts …

We present herewith a novel approach of equally thick AFE/FE (ZrO2/HZO) bilayer stack
heterostructure films for achieving an equivalent oxide thickness (EOT) of 4.1 Å with a …

The development of artificial tactile receptor systems is important in the fields of prosthetic
devices, interfaces for the metaverse, and sensors. A pressure sensor and memory device …

The ferroelectric properties of fluorite-structured oxides have attracted significant attention
from researchers because of their potential applications in nonvolatile memory devices …

HfO 2-based ferroelectric thin films have attracted significant interest for semiconductor
device applications due to their compatibility with complementary metal oxide …