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Class-E power amplifiers incorporating fingerprint augmentation with combinatorial security primitives for machine-learning-based authentication in 65 nm CMOS
Y Shen, J Xu, J Yi, E Chen… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
One means by which the security of Internet-of-Things (IoT)-enabled devices may be
augmented is through radio-frequency fingerprinting-based authentication methods. As …
augmented is through radio-frequency fingerprinting-based authentication methods. As …
[HTML][HTML] Aging compensation in a class-A high-frequency amplifier with DC temperature measurements
One of the threats to nanometric CMOS analog circuit reliability is circuit performance
degradation due to transistor aging. To extend circuit operating life, the bias of the main …
degradation due to transistor aging. To extend circuit operating life, the bias of the main …
Hot-carrier-injection resilient RF power amplifier using adaptive bias
An adaptive bias strategy is proposed to harden fully integrated CMOS RF power amplifiers
against time-dependent parametric degradation due to hot carrier injection. PA transistor DC …
against time-dependent parametric degradation due to hot carrier injection. PA transistor DC …
High sensitivity temperature measurements to track and compensate aging effects on CMOS amplifiers
D Mateo, X Aragones, E Barajas… - … on Device and …, 2024 - ieeexplore.ieee.org
This article presents a method to monitor and compensate gain degradation produced by
aging in linear CMOS amplifiers. The proposed procedure relies on a stand-alone …
aging in linear CMOS amplifiers. The proposed procedure relies on a stand-alone …
22FDX™ 5G 28GHz 20dBm Power Amplifier Constant Load and VSWR accelerated aging reliability
G Bossu, S Syed, S Evseev, JAS Jerome… - 2022 IEEE …, 2022 - ieeexplore.ieee.org
Power Amplifier (PA) is a key component for embedded RF/mmWave on advanced CMOS
technologies on the way to replace the III/V technologies. PA reliability has been a long …
technologies on the way to replace the III/V technologies. PA reliability has been a long …
RC-Effects on the Oxide of SOI MOSFET under Off-State TDDB Degradation: RF Characterization and Modeling
Based on S-parameter measurements, the effect of dynamic trap** and de-trap** of
charge in the gate oxide, the increase of dielectric loss due to polarization, and the impact of …
charge in the gate oxide, the increase of dielectric loss due to polarization, and the impact of …
Sensitive Devices and Phase Noise Degradation Mechanisms on all-NMOSFET RF VCO Aging
SM Pazos, JJ Baudino, MN Joglar… - … on Electronics (CAE …, 2020 - ieeexplore.ieee.org
Device level reliability is introduced into simulations of an optimized all-NMOSFET, cross-
coupled, radiofrequency Voltage Controlled Oscillator to trace the sensitive devices and …
coupled, radiofrequency Voltage Controlled Oscillator to trace the sensitive devices and …
Desafíos de confiabilidad en dispositivos y circuitos nano-electrónicos de radiofrecuencia
Las tecnologías de integración de circuitos nanoelectrónicos basadas en silicio se acercan
al límite de su evolución. La introducción de nuevos materiales para los dispositivos de …
al límite de su evolución. La introducción de nuevos materiales para los dispositivos de …