[HTML][HTML] Beyond solid-state lighting: Miniaturization, hybrid integration, and applications of GaN nano-and micro-LEDs
Gallium nitride (GaN) light-emitting-diode (LED) technology has been the revolution in
modern lighting. In the last decade, a huge global market of efficient, long-lasting, and …
modern lighting. In the last decade, a huge global market of efficient, long-lasting, and …
GaN-based light-emitting diodes on various substrates: a critical review
G Li, W Wang, W Yang, Y Lin, H Wang… - Reports on Progress …, 2016 - iopscience.iop.org
GaN and related III-nitrides have attracted considerable attention as promising materials for
application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present …
application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present …
Vertical power pn diodes based on bulk GaN
IC Kizilyalli, AP Edwards, O Aktas… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
There is a great interest in wide-bandgap semiconductor devices and most recently in
monolithic GaN structures for power electronics applications. In this paper, vertical pn diodes …
monolithic GaN structures for power electronics applications. In this paper, vertical pn diodes …
Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz
This paper reviews the device physics and technology of optoelectronic devices based on
semiconductors of the GaN family, operating in the spectral regions from deep UV to …
semiconductors of the GaN family, operating in the spectral regions from deep UV to …
Semipolar (20-2-1) InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting
This work examines the effects of polarization-related electric fields on the energy band
diagrams, wavelength shift, wave function overlap, and efficiency droop for InGaN quantum …
diagrams, wavelength shift, wave function overlap, and efficiency droop for InGaN quantum …
Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes
Nonpolar and semipolar III-nitride-based blue and green light-emitting diodes (LEDs) have
been extensively investigated as potential replacements for current polar c-plane LEDs …
been extensively investigated as potential replacements for current polar c-plane LEDs …
Analysis of internal quantum efficiency and current injection efficiency in III-nitride light-emitting diodes
Current injection efficiency and internal quantum efficiency (IQE) in InGaN quantum well
(QW) based light emitting diodes (LEDs) are investigated. The analysis is based on current …
(QW) based light emitting diodes (LEDs) are investigated. The analysis is based on current …
Ab initio study of electronic and optical behavior of two-dimensional silicon carbide
Two-dimensional graphene-like silicon carbide (2d-SiC) has emerged as an intriguing new
class of layered nanostructure. Using density functional theory, key electronic and optical …
class of layered nanostructure. Using density functional theory, key electronic and optical …
Semipolar (1122) AlGaN-based solar-blind ultraviolet photodetectors with fast response
Y Gao, J Yang, X Ji, R He, J Yan… - ACS Applied Materials …, 2022 - ACS Publications
The high-quality semipolar (112̅2) AlGaN epitaxial films have been obtained on m-plane
sapphire by metal–organic chemical vapor deposition. X-ray rocking curve measurements …
sapphire by metal–organic chemical vapor deposition. X-ray rocking curve measurements …
Synthesis, lattice structure, and band gap of ZnSnN2
We report the synthesis of a direct gap semiconductor, ZnSnN2, by a plasma-assisted vapor–
liquid–solid technique. Powder X-ray diffraction measurements of polycrystalline material …
liquid–solid technique. Powder X-ray diffraction measurements of polycrystalline material …