Spin–orbit torque induced ferromagnetic magnetization switching brought by injecting a
charge current into strong spin–orbit-coupling materials is an energy-efficient writing method …

Two-dimensional van der Waals (2D vdW) ferromagnets possess outstanding scalability,
controllable ferromagnetism, and out-of-plane anisotropy, enabling the compact spintronics …

The magnetic properties in substrate/Pt/Co multilayers, such as perpendicular magnetic
anisotropy (PMA), are of particular interest for spintronic devices. In particular, it is important …

Tripartite antiferromagnets (AFMs) with a 120∘ spin order, exhibiting unconventional
transport properties, facilitate detecting AFM states. This inspires some studies on terahertz …

The current-induced spin-orbit torque (SOT) is one of the most promising ways for high
speed and low power spintronics devices. However, the mechanism of SOT driven …

The authors developed the electrodeposition technique for CoPt thin films applicable to 3-D
domain wall motion memory (3D-DWMM). CoPt films with perpendicular magnetic …

Perpendicular synthetic antiferromagnets (p-SAFs) are of interest for the next generation of
ultrafast, high-density spintronic memory and logic devices. However, to efficiently operate …

We propose a novel cell structure of spin–orbit torque (SOT) magnetic random-access
memory (MRAM), which consists of three transistors and two canted-type x SOT magnetic …

Recently, the inertia has been demonstrated for magnetization dynamics, such as the
nutational resonance and spin wave, as well as the inertial switching. Here, we focus on the …

We perform a theoretic study on equilibria and self-oscillations of a noncollinear
antiferromagnet under spin-orbit torques and focus on the latter, which may be detected by …