Low Frequency Noise Characteristics in 16 nm FinFET Technology

Low Frequency Noise and Hot Carrier Degradation Characteristics on 55nm LP Platform

G Wang, C Hu, F Ding - 2024 Conference of Science and …, 2024 - ieeexplore.ieee.org
The integration of 55-nm radio frequency (RF) and mixed-signal technology on the low
power (LP) platform has enabled highly integrated system on chip (SoC) solutions. The RF …
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