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Magnetoresistance effect element and magnetic memory device
(57) ABSTRACT A magnetoresistance effect element (100) includes a heavy metal layer
(11) that includes a heavy metal and that is formed to extend in a first direction, a recording …
(11) that includes a heavy metal and that is formed to extend in a first direction, a recording …
Precessional spin current structure with non-magnetic insertion layer for MRAM
(57) ABSTRACT A magnetoresistive random-access memory (MRAM) is disclosed. MRAM
device has a magnetic tunnel junction stack having a significantly improved performance of …
device has a magnetic tunnel junction stack having a significantly improved performance of …
Precessional spin current structure with high in-plane magnetization for MRAM
(56) References Cited 7352021 B2 4/2008 Bae et al. 7376006 B2 5/2008 Bednorz et al. US
PATENT D ()(" UMENTS 7378699 B2 5/2008 Chan et al. 7449345 B2 11/2008 Horng et al …
PATENT D ()(" UMENTS 7378699 B2 5/2008 Chan et al. 7449345 B2 11/2008 Horng et al …
High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory
(57) ABSTRACT A perpendicular synthetic antiferromagnetic (PSAF) struc ture and method
of making such a structure is disclosed. The PSAF structure can be a first high perpendicular …
of making such a structure is disclosed. The PSAF structure can be a first high perpendicular …
Magnetoelectric random access memory array and methods of operating the same
US10354710B2 - Magnetoelectric random access memory array and methods of operating the
same - Google Patents US10354710B2 - Magnetoelectric random access memory array and …
same - Google Patents US10354710B2 - Magnetoelectric random access memory array and …
Metallic magnetic memory devices for cryogenic operation and methods of operating the same
(57) ABSTRACT A MRAM device includes a spin valve containing a refer ence layer having
a fixed magnetization direction, a free layer, and a nonmagnetic metallic barrier layer …
a fixed magnetization direction, a free layer, and a nonmagnetic metallic barrier layer …
Magnetic sensor using inverse spin hall effect
PA Van der Heijden, Q Le, K San Ho, X Liu… - US Patent …, 2018 - Google Patents
(57) ABSTRACT A magnetic sensor that generates a signal based on inverse spin Hall
effect. The sensor includes a magnetic free layer and a non-magnetic, electrically conductive …
effect. The sensor includes a magnetic free layer and a non-magnetic, electrically conductive …
Spin-orbit torque type magnetization reversal element, magnetic memory, and high frequency magnetic device
T Sasaki, Y Shiokawa - US Patent 10,319,901, 2019 - Google Patents
(57) ABSTRACT A spin-orbit torque type magnetization reversal element including a
ferromagnetic metal layer with a varying mag netization direction; and spin-orbit torque …
ferromagnetic metal layer with a varying mag netization direction; and spin-orbit torque …
Polishing stop layer (s) for processing arrays of semiconductor elements
MM Pinarbasi, JA Hernandez, A Datta… - US Patent …, 2020 - Google Patents
Described embodiments can be used in semiconductor manufacturing and employ materials
with high and low polish rates to help determine a precise polish end point that is consistent …
with high and low polish rates to help determine a precise polish end point that is consistent …
Perpendicular exchange bias with antiferromagnet for spin orbit coupling based memory
An apparatus is provided which comprises: a magnetic junction including: a first structure
comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to …
comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to …