Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the
implementation of epitaxial‐thin‐film‐based studies, which have driven many advances in …

Long viewed as a topic in classical physics, ferroelectricity can be described by a quantum
mechanical ab initio theory. Thin-film nanoscale device structures integrated onto Si chips …

Incipient ferroelectricity is known to occur in perovskites such as SrTiO3, KTaO3, and
CaTiO3. For the first time it is shown that the intensively researched HfO2 thin films (16 nm) …

In the past year it has become possible to fabricate ferroelectric thin-film memories onto
standard silicon integrated circuits that combine very high speed (30-nanosecond …

This review covers important advances in recent years in the physics of thin-film ferroelectric
oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin-film …

With much excitement and great enthusiasm I introduce this thorough treatise on the major
aspects of domain and domain wall phenomena in ferroics, mostly ferroelectrics, a major …

Device applications of ferroelectrics have not only utilized the switchable polarization but
also adopted myriads of emerging physical properties. In particular, ferroelectrics in ultra …

The equilibrium polarization states and physical properties of single-domain Pb (Zr 1− x Ti x)
O 3 (PZT) thin films epitaxially grown on dissimilar cubic substrates have been examined by …

Abstract A Landau-Ginsburg-Devonshire-type nonlinear phenomenological theory is
presented, which enables the thermodynamic description of dense laminar polydomain …

This contribution begins with a discussion of the homogeneous Landau theory for bulk
ferroelectrics with spatially uniform polarizations, reviewing firstand second-order transitions …