[HTML][HTML] On large-signal modeling of GaN HEMTs: past, development and future
In the past few decades, circuits based on gallium nitride high electron mobility transistor
(GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and …
(GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and …
A scalable large-signal multiharmonic model of AlGaN/GaN HEMTs and its application in C-band high power amplifier MMIC
Y Xu, C Wang, H Sun, Z Wen, Y Wu… - IEEE Transactions …, 2017 - ieeexplore.ieee.org
A scalable electrothermal large-signal AlGaN/GaN HEMTs model for both fundamental and
multiharmonics is presented based on the modified Angelov model. To obtain accurate …
multiharmonics is presented based on the modified Angelov model. To obtain accurate …
A quasi-physical compact large-signal model for AlGaN/GaN HEMTs
Z Wen, Y Xu, Y Chen, H Tao, C Ren… - IEEE Transactions …, 2017 - ieeexplore.ieee.org
This paper presents an accurate quasi-physical compact large-signal model for GaN high
electron mobility transistors (HEMTs). The drain current I ds expression is acquired by …
electron mobility transistors (HEMTs). The drain current I ds expression is acquired by …
GaN HEMT noise model based on electromagnetic simulations
This paper presents a new approach for the definition and identification of a transistor model
suitable for low-noise amplifier (LNA) design. The resulting model is very robust to layout …
suitable for low-noise amplifier (LNA) design. The resulting model is very robust to layout …
A new modeling technique for microwave multicell transistors based on EM simulations
Dealing with high-power operation (ie,> 100 W) is extremely critical to power-amplifier
designers due to the lack of accurate transistor models of multicell (ie, powerbar) devices …
designers due to the lack of accurate transistor models of multicell (ie, powerbar) devices …
A new approach to microwave power amplifier design based on the experimental characterization of the intrinsic electron-device load line
This paper presents a new original approach to power amplifier design, which is mainly
based on low-frequency nonlinear empirical electron device (ED) characterization. The …
based on low-frequency nonlinear empirical electron device (ED) characterization. The …
Multilayer perceptron–random forest based hybrid machine learning–neural network model for GaN high electron mobility transistor's parameter estimations
This work presents an accurate, scalable, and efficient hybrid machine learning (ML) and
neural network (NN) model based, cross‐platform application to analyze and estimate …
neural network (NN) model based, cross‐platform application to analyze and estimate …
Multiphysics modeling of RF and microwave high-power transistors
PH Aaen, J Wood, D Bridges, L Zhang… - IEEE transactions on …, 2012 - ieeexplore.ieee.org
In this paper, we present a multiphysics approach for the simulation of high-power RF and
microwave transistors, in which electromagnetic, thermal, and nonlinear transistor models …
microwave transistors, in which electromagnetic, thermal, and nonlinear transistor models …
Effects of gate-length scaling on microwave MOSFET performance
This paper focuses on the extraction of an accurate small-signal equivalent circuit for metal-
oxide-semiconductor field-effect transistors (MOSFETs). An analytical modeling approach …
oxide-semiconductor field-effect transistors (MOSFETs). An analytical modeling approach …
A robust Ku-band low noise amplifier using an industrial 0.25-µm AlGaN/GaN on SiC process
D Resca, F Scappaviva, C Florian… - 2013 European …, 2013 - ieeexplore.ieee.org
Besides the well known outstanding characteristics in terms of power density and thermal
behavior, which are largely exploited for microwave high power applications, AlGaN/GaN …
behavior, which are largely exploited for microwave high power applications, AlGaN/GaN …